RF Power Amplifiers and Mobile Communication Terminals

A technology of radio frequency power and power amplification module, which is applied in the direction of telephone communication, telephone structure, electrical components, etc. It can solve the problems of low power control and detection accuracy of radio frequency power amplifiers, multiple layout areas, and high cost, and achieve layout area saving , area saving and low cost effect

Active Publication Date: 2018-08-14
AMPLEON SEMICON SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the embodiment of the present invention is that the power control and detection accuracy of the existing radio frequency power amplifier is not high, the cost is high, and the layout area occupied is large

Method used

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  • RF Power Amplifiers and Mobile Communication Terminals
  • RF Power Amplifiers and Mobile Communication Terminals
  • RF Power Amplifiers and Mobile Communication Terminals

Examples

Experimental program
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Embodiment Construction

[0022] The radio frequency power amplifier of the embodiment of the present invention can be applied in a radio frequency power amplifier chip of a mobile communication terminal or other similar radio frequency power amplifier chips that require power control.

[0023] Such as Figure 4 As shown, the radio frequency power amplifier includes: a power amplification module PA, a loop control module LC, a detection and amplification module DA, a first inductor L1, a second inductor L2, a third inductor L3, a first capacitor C1 and a second capacitor C2 .

[0024] The voltage at the first end of the first inductor L1 is the power supply voltage Vbatt, the third inductor L3 is coupled to the first inductor L1, the first end of the third inductor L3 is connected to the input end of the detection and amplification module DA, and the third inductor L3 is connected to the input end of the detection amplifier module DA. Both ends are grounded.

[0025] One input terminal of the loop co...

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Abstract

The invention discloses a radio frequency power amplifier and a mobile communication terminal. The radio frequency power amplifier comprises a power amplifying module, a loop circuit control module, a detection amplifying module, a first inductor, a second inductor, a third inductor, a first capacitor and a second capacitor; the voltage of the first end of the first inductor is supply voltage, the third inductor is coupled with the first inductor, the first end of the third inductor is connected with the input end of the detection amplifying module, and the second end of the third inductor is grounded; the loop circuit control module inputs control voltage and output voltage and output bias voltage of the detection amplifying module; the power amplifying module is controlled by the bias voltage, the input end of the power amplifying module is connected with the radio frequency input end, the output end of the power amplifying module is connected with the second end of the first inductor and the first end of the second inductor, the second end of the second inductor is connected with the first end of the first capacitor and the second end of the second capacitor, the second end of the first capacitor is grounded, and the first end of the second capacitor is connected with the radio frequency output end. The radio frequency power amplifier has the advantages of being high in precision, low in cost and capable of saving the area.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to a radio frequency power amplifier and a mobile communication terminal including the radio frequency power amplifier. Background technique [0002] In a wireless mobile communication terminal, such as a GSM mobile phone, it is necessary to control the power of the radio frequency signal transmitted from the terminal, and the radio frequency power amplifier is used for power control and detection. There are three schemes for the commonly used RF power amplifiers: [0003] A scheme such as figure 1 As shown, two PMOS transistors M1 and M2 are needed, and the PMOS transistor M1 is the main control transistor for controlling the power supply voltage Vcc of the power amplifier circuit. Due to the influence of the operational amplifier and the feedback loop H(s), the power supply voltage Vcc is a function of the control voltage Vramp, that is, the power supply ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04B1/034H04B1/04H04B1/38H04M1/02
CPCH04B1/0346H04B1/04H04B1/3827H04B2001/0408H04M1/0202
Inventor 杨琳
Owner AMPLEON SEMICON SHANGHAI CO LTD
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