Reference voltage generation circuit with temperature compensating function

A voltage generation circuit and reference voltage technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of circuit performance impact, poor matching, and monotonicity of the later stage, and reduce system power consumption, Optimizing the effect of matching

CN105892548AActive Publication Date: 2016-08-24TANGSHAN GUOXIN JINGYUAN ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2016-08-24

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Abstract

A reference voltage generation circuit with a temperature compensating function relates to the reference voltage source technical field; the reference voltage generation circuit comprises a positive temperature coefficient voltage generation circuit and a similar LDO circuit connected in sequence; the positive temperature coefficient voltage generation circuit comprises single-stage or multistage unit circuits, wherein each stage unit circuit comprises a bias current source P using a MOS pipe and two NMOS pipes; unit circuits of various stages are cascaded in sequence; the grid electrode of NMOS pipe A and the grid electrode of NMOS pipe B in each stage unit circuit are connected, and respectively connected with the drain electrode of the NMOS pipe A and the drain electrode of the bias current source P; the source electrode of the NMOS pipe A and the drain electrode of the NMOS pipe B are connected to serve as an output node; the current generated by the bias current source P passes the NMOS pipe A and NMOS pipe B of the same stage, and is connected the source electrode of the NMOS pipe A and drain electrode of the NMOS pipe B of the next stage unit circuit through the source electrode of the NMOS pipe B of the previous stage; the similar LDO circuit comprises an operational amplifier and an output unit; the reference voltage generation circuit can effectively reduce system power consumption without obviously increasing area, and has the temperature compensating function.
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Description

technical field

[0001] The invention relates to the technical field of reference voltage sources, in particular to a reference voltage generation circuit with temperature compensation function. Background technique

[0002] The voltage reference source is one of the indispensable components in many circuit systems. It is often used to provide a low temperature coefficient reference voltage for high-performance analog circuits or digital circuit modules to improve the performance of the circuit.

[0003] In the prior art, in the field of integrated circuits, traditional voltage reference source circuits usually use a bandgap reference circuit composed of classic bipolar transistors. The basic principle is that the base-emitter junction of bipolar crystals has negative temperature characteristics ; On the other hand, when the collector currents of bipolar transistors are different, the temperature curves of the base-emitter junctions are different. When different currents flow...

Examples

Embodiment Construction

[0015] The reference voltage generation circuit with temperature compensation function of the present invention includes a positive temperature coefficient voltage generation circuit 11 and an LDO-like circuit 22 connected in sequence. After the voltage with positive temperature coefficient output by the positive temperature coefficient voltage generating circuit 11 is superimposed on the voltage with negative temperature coefficient by the LDO-like circuit 22 , the output end of the LDO-like circuit 22 outputs a reference voltage Vref with a low temperature coefficient. The positive temperature coefficient voltage generating circuit 11 is composed of single-level or multi-level unit circuits, and each unit circuit includes a bias current source P using MOS transistors and two NMOS transistors. The unit circuits at all levels are sequentially cascaded, and the gate of NMOS transistor A in each level of unit circuit is connected to the gate of NMOS transistor B, and then respect...