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Processing of semiconductor devices

A process and process room technology, applied in the field of semiconductor device processing, can solve problems such as yield loss, increase in production cost, processing variation and reduction in processing allowance.

Inactive Publication Date: 2019-01-22
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Process variations can lead to yield loss as the performance of individual devices or entire chips becomes out of bounds and can therefore dramatically increase production costs
A challenge in semiconductor manufacturing is the improvement or reduction of process variation while reducing machining margins

Method used

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  • Processing of semiconductor devices
  • Processing of semiconductor devices
  • Processing of semiconductor devices

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Embodiment Construction

[0024] Wafers are often thinned from the back side after all front side processing is complete. Wafer thinning reduces resistance to current flow (specifically called ON resistance during the ON state) and improves heat extraction from the die during operation.

[0025] Power applications with vertical devices have more stringent requirements because on-resistance is very dependent on final die thickness. Therefore, technological progress is driven by reductions in substrate thickness. However, one of the challenges associated with thinning involves reducing or minimizing the variation in thickness across the wafer. Large variations in the thickness of the die during thinning result in variations in the on-resistance and heat extraction capabilities, and thus in the performance of the die.

[0026] Conventional methods for substrate thinning use a combination of mechanical grinding and spin etching. However, large unevenness may be generated in this thinning process.

[00...

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Abstract

One method of thinning a wafer includes using a grinding process to thin the wafer. After the grinding process, the wafer has a first non-uniformity in thickness. The thinned wafer is etched using a plasma process. The wafer has a second non-uniformity in thickness after the etching process. The second unevenness is smaller than the first unevenness.

Description

technical field [0001] The present invention relates generally to semiconductor fabrication, and in particular embodiments, to the processing of semiconductor devices. Background technique [0002] Semiconductor devices are used in many electronic and other applications. Semiconductor devices may include integrated circuits formed on semiconductor wafers. Alternatively, semiconductor devices may be formed as monolithic devices, such as discrete devices. Semiconductor devices are formed on a semiconductor wafer by processes such as depositing thin films of various types of materials on the semiconductor wafer, patterning the thin films of materials, doping selective regions of the semiconductor wafer, and the like. [0003] In conventional semiconductor manufacturing processes, a large number of semiconductor devices are fabricated in a single wafer. After the fabrication processes at the device level and interconnection level are complete, the semiconductor devices on the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/3065H01L21/67
CPCH01L21/02013H01L21/02016H01L21/3065H01L21/67098H01L21/67103H01L21/67248H01L21/6835H01L21/6836H01L2221/68327H01L2221/6834H01L21/304
Inventor H·埃德M·恩格尔哈特
Owner INFINEON TECH AG