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Manufacturing method of tft substrate

A manufacturing method and substrate technology, which are applied in semiconductor/solid-state device manufacturing, instruments, semiconductor devices, etc., can solve problems such as affecting the opening ratio of products and increasing the area of ​​touch sensing lines 870, so as to improve the opening ratio and reduce the metal area. Effect

Active Publication Date: 2019-01-01
CHANGSHA HKC OPTOELECTRONICS CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The subsequently formed touch sensing line 870 must completely cover the first via hole 851, and the larger CD of the first via hole 851 will cause the area of ​​the touch sensing line 870 to increase synchronously. For light-transmitting metal materials, the increase in the area will affect the aperture ratio of the product design

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  • Manufacturing method of tft substrate
  • Manufacturing method of tft substrate
  • Manufacturing method of tft substrate

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Embodiment Construction

[0038] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0039] see image 3 , the present invention provides a method for manufacturing a TFT substrate, the TFT substrate manufactured by the method is applied to an in-cell touch display panel, comprising the following steps:

[0040] Step 1, such as Figure 4 As shown, a substrate 10 is provided, a buffer layer 15 is formed on the substrate 10, an amorphous silicon layer is deposited on the buffer layer 15, and the amorphous silicon layer is subjected to laser treatment to crystallize it into a polysilicon layer. The polysilicon layer is patterned by a photolithography process to obtain a polysilicon segment; N-type doping is performed on the polysilicon segment to form N-type heavily doped regions 21 at both ends, a first channel region 22 in the...

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Abstract

The present invention provides a TFT substrate manufacturing method. The method comprises: after depositing a second insulating layer on a flat layer, using a halftone mask plate to manufacture two via holes with different designs in the second insulating layer, wherein the halftone mask plate comprises an all-transparent region and a semi-transparent region; forming via holes inside the via holes of the flat layer in the second insulating layer by using the all-transparent region of the halftone mask plate; and forming a via hole above the flat layer in the second insulating layer by using the semi-transparent region of the halftone mask plate, so that during formation of the two via holes, it is ensured that with respective photoresist materials corresponding to the two via holes being exposed, the CD Loss of the via holes above the flat layer in the second insulating layer is relatively small, and the metal area covering the via holes is reduced, thereby improving the aperture ratio of the panel and the spatiality of design.

Description

technical field [0001] The present invention relates to the technical field of touch display, in particular to a method for manufacturing a TFT substrate used in an in-cell touch display panel. Background technique [0002] With the development of display technology, liquid crystal displays (Liquid Crystal Display, LCD) and other flat display devices are widely used in mobile phones, televisions, personal Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become the mainstream of display devices. [0003] Most of the liquid crystal display devices currently on the market are backlight liquid crystal displays, which include a liquid crystal display panel and a backlight module. The working principle of the liquid crystal display panel is to place liquid crystal molecules between two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates. The d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12G02F1/1368
CPCG02F1/1368H01L21/77H01L27/1214H01L27/1259H01L27/1288
Inventor 卢改平
Owner CHANGSHA HKC OPTOELECTRONICS CO LTD