Method for improving conductivity of silicon powder

A conductivity and silicon powder technology, which is applied in the field of new energy nanomaterial preparation, can solve the problem of low conductivity of silicon materials, and achieve the effect that the conductivity can be precisely controlled

Inactive Publication Date: 2016-09-07
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to address the deficiencies in the prior art and provide a method for improving the conductivity of silicon powder. The method is simple in process and can be produced at low cost and on a large scale, and can fundamentally solve the problem of low conductivity of silicon materials

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A method for improving the conductivity of silicon powder described in this embodiment specifically includes the following steps.

[0029] (1) Clean the p-type silicon powder raw material with acetone and aqueous solution in sequence.

[0030] (2) Then, stir and mix the cleaned p-type silicon powder, boric acid and ultrapure water at a mass ratio of 1:1:1, the solution temperature is 25°C, and the stirring time is 30 minutes, and then the mixed p-type silicon powder Filter and dry.

[0031] (3) Finally, the above-mentioned mixed p-type silicon powder is heat-treated under a protective atmosphere, the treatment temperature is 900° C., and the treatment time is 60 minutes.

[0032] This method can be used to obtain a conductivity of 5×10 3 S / cm p-type silicon powder.

Embodiment 2

[0034] A method for improving the conductivity of silicon powder described in this embodiment specifically includes the following steps.

[0035] (1) Clean the p-type silicon powder raw material with acetone and aqueous solution in sequence.

[0036] (2) Then, stir and mix the cleaned p-type silicon powder and aluminum paste for solar cells at a mass ratio of 1:1, the solution temperature is 60°C, and the stirring time is 60 minutes, and then the mixed p-type silicon powder is pumped Filter and dry.

[0037] (3) Finally, the above-mentioned mixed p-type silicon powder is heat-treated under a protective atmosphere, the treatment temperature is 900° C., and the treatment time is 60 minutes.

[0038] Using this method, the conductivity can be obtained as 3×10 3 S / cm p-type silicon powder.

Embodiment 3

[0040] A method for improving the conductivity of silicon powder described in this embodiment specifically includes the following steps.

[0041] (1) Clean the n-type silicon powder raw material with acetone and aqueous solution in sequence.

[0042] (2) Then stir and mix the cleaned n-type silicon powder, phosphoric acid and ultrapure water according to the mass ratio of 1:1:1, the solution temperature is 50°C, and the stirring time is 60 minutes, and then the mixed n-type silicon powder Filter and dry.

[0043] (3) Finally, the above-mentioned mixed n-type silicon powder is heat-treated under a protective atmosphere, the treatment temperature is 850° C., and the treatment time is 60 minutes.

[0044] Using this method can obtain a conductivity of 2×10 3 S / cm n-type silicon powder.

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Abstract

The invention discloses a method for improving conductivity of silicon powder. The method comprises the following steps: orderly adopting propane and an aqueous solution to clean p-type / n-type silicon powder raw material; and then placing the cleaned p-type / n-type silicon powder in a solution containing group-IIV elements / group-V elements to stir and mix, suction-filtering and drying the mixed p-type / n-type silicon powder; and thermally treating the mixed p-type / n-type silicon powder under the protective atmosphere; the method aims at diffusing the group-IIV elements / group-V elements into the silicon to play the doping effect, thereby improving the conductivity of the silicon powder. The method disclosed by the invention is simple in process, low in cost, controllable in silicon powder conductivity, and suitable for large-scale industrial production, and is expected to get good actual application in the fields such as lithium ion batteries, photoelectric materials and sensors.

Description

technical field [0001] The invention belongs to the technical field of new energy nano material preparation. Background technique [0002] As we all know, lithium-ion batteries have been widely used due to their excellent characteristics such as high energy density, high power density, good cycle performance, environmental friendliness, and structural diversity. In terms of the development needs of lithium-ion power batteries, the negative electrode materials are required to have the characteristics of high capacity and fast charging and discharging. The theoretical capacity of existing graphite anode materials is 372mAh / g, among which commercial graphite anode products have reached about 350mAh / g, and there is basically no room for improvement. The theoretical capacity of silicon as the anode material of lithium-ion batteries can reach about 4200mAh / g, and the content of silicon in the earth's crust is abundant, second only to oxygen, so it has become a research hotspot. ...

Claims

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Application Information

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IPC IPC(8): H01M4/38H01M4/62H01M10/0525
CPCH01M4/386H01M4/625H01M10/0525Y02E60/10
Inventor 岳之浩周浪黄海宾汤昊尹传强高超
Owner NANCHANG UNIV
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