Semiconductor device

Abstract

Provided is a semiconductor device comprising: a first circuit (10, a high-side circuit) that operates with a first potential (VS) being used as a reference potential; and a second circuit (20, a low-side circuit) that operates with a second potential (GND) different from the first potential (VS) being used as a reference potential, wherein it can be detected with reliability that a negative voltage has been applied to the first circuit (10). The high-side circuit (10) comprises a current source (13). The current source (13) supplies a current (I-BIAS) to the low-side circuit (20), and varies the current (I-BIAS) according to whether the first potential (VS) is a negative voltage relative to the second potential (GND). The low-side circuit (20) comprises a negative voltage detection circuit (25). The negative voltage detection circuit (25) monitors the variation of the current (I-BIAS) supplied from the current source (13) and detects that a negative voltage has been applied to the high-side circuit (10).

Description

technical field [0001] The present invention relates to a high-side circuit and a low-side circuit that control complementary on-off (on-off) driving of, for example, a first semiconductor switching element and a second semiconductor switching element forming a half-bridge circuit, particularly A semiconductor device capable of reliably detecting a negative voltage applied to the high-side circuit when the first semiconductor switching element is turned off. Background technique [0002] As a power supply device for driving an industrial motor or a server, it is known to include a first semiconductor switching element and a second semiconductor switching element connected in series to form a half-bridge circuit, and to supply the motor, etc., from the midpoint of the half-bridge circuit. A power supply unit that supplies power to a load. The first semiconductor switching element and the second semiconductor switching element in such a power supply device are constituted by,...

AI Technical Summary

Problems solved by technology

Therefore, a large current flows from the ground potential terminal to the semiconductor device due to the negative voltage surge, and the semiconductor device may be destroyed by the large current.

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