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Method for producing a porous structure in a layer structure of a semiconductor component and a mems component having said porous structure element

A technology of structural elements and porosity, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor electrostatic transducers, etc., can solve problems that affect the electrical characteristics of integrated circuit components and damage the functionality of integrated circuit components

Active Publication Date: 2020-08-04
ROBERT BOSCH GMBH
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Problems solved by technology

[0003] A particular challenge during production is to configure the process sequence in such a way that the electrical and mechanical properties of the functional elements already produced in the layer structure are not adversely affected by subsequent process steps
For example, high temperature process steps affect the electrical characteristics of integrated circuit components, which can impair the functionality of integrated circuit components

Method used

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  • Method for producing a porous structure in a layer structure of a semiconductor component and a mems component having said porous structure element
  • Method for producing a porous structure in a layer structure of a semiconductor component and a mems component having said porous structure element
  • Method for producing a porous structure in a layer structure of a semiconductor component and a mems component having said porous structure element

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Embodiment Construction

[0016] In the exemplary embodiment described here, the microphone structure of the MEMS microphone component is realized in a layer structure on the base substrate 1 . In this case, for example, a silicon substrate 1 may be involved.

[0017] In a first process step, the substrate surface is provided with a silicon oxide layer 2 . The silicon oxide layer 2 serves on the one hand as an etch stop layer for the backside etching process, wherein the base substrate 1 is completely removed in a defined region, ie the diaphragm region, in order to expose the microphone diaphragm 10 on the rear side. On the other hand, the silicon oxide layer 2 acts as electrical insulation between the base substrate 1 and the polysilicon layer 3 applied on the silicon oxide layer 2 . In a subsequent process step, the microphone diaphragm 10 is realized in the polysilicon layer 3 , which also serves as the diaphragm electrode of the microphone capacitor.

[0018] Prior to this, however, a thick sili...

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Abstract

A method for producing a porous structure in the layer structure of a semiconductor component and an MEMS component with such a porous structural element. A possibility is provided for the realization of extremely light but mechanically rigid and thermally insulating structural elements in the layer structure of a semiconductor component which can realize without high-temperature process steps. For this purpose, a template (20) is first produced in a surface region of the layer structure (100) by applying at least one colloid in a dispersion medium and subsequently removing the dispersion medium. The individual colloid particles (21) themselves are arranged themselves in the template (20). Then at least one coating material (23) is deposited in the region of the template (20). In this case, the individual colloid particles (21) are at least partially enveloped by the coating material (23). Thereafter, the colloid material (21) is removed so that only the continuous coatings composed of the coating material (23) remain in the region of the template (20).

Description

technical field [0001] The invention relates to a method for producing a porous structure in a layer structure of a semiconductor component and to a MEMS component having at least one such porous structure element. Background technique [0002] In general, the overall functionality of a semiconductor component results from the interaction of multiple electrical and possibly mechanical functions which are implemented in different layer regions and chip regions of the component. For this purpose, within the scope of the production process, layer regions and chip regions having different defined electrical and mechanical properties are selectively realized. [0003] A particular challenge during production is to configure the process sequence in such a way that the electrical and mechanical properties of the functional elements already produced in the layer structure are not adversely affected by subsequent process steps. For example, high temperature process steps affect the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/02H01L21/316
CPCB81B7/02B81C1/00015B81C2201/0174H01L21/02172B81B2201/0257B81B2201/0264B81C1/00158H04R19/005H04R19/04H04R31/006H04R19/00
Inventor F·舍恩B·格尔
Owner ROBERT BOSCH GMBH
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