Heating device used for semiconductor fast annealing and control method

Abstract

The invention relates to a heating device used for semiconductor fast annealing and a control method. The heating device includes a power source module, a rectifying and filtering module, an IGBT (insulated gate bipolar transistor) module, a PWM (pulse width modulation) signal driving module, a heating lamp tube group and a computer control system; the power source module is connected with the rectifying and filtering module; the IGBT module comprises an input port, a control port and an output port; the rectifying and filtering module is connected with the input port of the IGBT module; the PWM signal driving module is connected with the control port of the IGBT module; the PWM signal driving module is controlled through the computer control system and is used for controlling the on-off time of the IGBT so as to adjust the heating power of the heating lamp tube group; and the heating lamp tube group is connected with the output port of the IGBT module and is used for device heating. With the heating device used for semiconductor fast annealing and the control method of the invention adopted, an overshoot phenomenon in a fast heating process can be effectively suppressed, stable temperature rise can be realized, and at the same time, the instability of heating caused by stroboflash can be avoided, and the service lives of lamp tubes can be prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing and processing, in particular to a semiconductor heat treatment process device and a heating control method. Background technique [0002] At present, the heat treatment equipment of the traditional rapid annealing process adjusts the conduction angle of the thyristor to adjust the radiation power of the lamp tube to achieve the effect of rapid temperature rise. However, due to the limitation of the dead zone of the thyristor regulation, and in order to avoid the excessively fast temperature rise rate during the heating process, the method of strobe flickering of the radiation lamp is generally used to achieve a stable temperature rise rate and a constant annealing temperature in the rapid annealing process. Therefore, The inconvenience is that during the heat treatment process of the rapid annealing process, the strobe cycle of the heating lamp regulated by the thyristor is long, which ...

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Problems solved by technology

However, due to the limitation of the dead zone of the thyristor adjustment, and in order to avoid the excessively fast heating rate during the heating process, the method of strobe flickering of the radiation lamp is generally used to achieve a stable heating rate and a constant annealing temperature in the rapid annealing process. Therefore, The inconvenience is that during the heat treatment process of the rapid annealing process, the heating lamp regulated by the thyristor has a long strobe cycle, which seriously affects the temperature stability during the heating process, and the frequent switching of the heating lamp also affects the heating lamp. tube life

In addition, in the control method of driving the thyristor to regulate the lamp tube, the PID algorithm (closed-loop control algorithm) is usually used to realize the purpose of the thyristor to regulate the lamp tube heating. This control method will inevitably introduce temperature overshoot, and the same Affects the temperature stability of the annealing process

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