A method for graphene to remove valence electrons

A technology of valence electrons and graphene, applied in the field of graphene devalence electrons, can solve the problems of undisclosed graphene devalence electron technology, high chemical stability of graphene, difficult application of graphene, etc., so as to change the characteristics of mutual attraction , the effect of easy industrial scale-up and low production cost

Active Publication Date: 2018-10-30
CHONGQING DELING TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, graphene with a complete structure has high chemical stability, weak interaction with other media, and strong van der Waals attraction between layers, making it difficult to disperse in many common solvents to form a stable solution, which poses a challenge to the further application of graphene. It is extremely difficult. To realize the uniform and stable dispersion of graphene in the oil, the surface of graphene should be modified to remove the valence electrons on the surface of graphene.

Method used

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  • A method for graphene to remove valence electrons

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Experimental program
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Effect test

Embodiment 1

[0023] Add graphene oxide, PEG, urea, and sodium sulfide to the ether solvent (graphene oxide: PEG: urea: sodium sulfide: ether = 100g: 4g: 5g: 3g: 2L), sonicate for 2 hours, and place the mixed solution in In the fume hood, the graphene / valence electron remover mixture is obtained after the solvent is volatilized. Place the obtained graphene / valence electron remover mixture in a carbon dioxide / water vapor (flow 200ml / min) / argon (flow 200ml / min) atmosphere, activate it at 800℃ for 100min, stop heating, The gas flow was switched to diborane, and the reaction was carried out at 200°C for 15 hours. Finally, the temperature was naturally reduced to room temperature in a mixed atmosphere of argon (flow rate of 200ml / min) to obtain devalence electron graphene.

Embodiment 2

[0025] Dissolve graphene oxide, potassium 12-tungstophosphate and phosphoric acid in deionized water (graphene oxide: potassium 12-tungstophosphate: phosphoric acid: water = 100g: 3g: 5g: 2L), ultrasonically stir for 1 hour, and centrifuge to obtain The graphene / valence electron remover mixture is placed in a carbon dioxide / water vapor (flow 200ml / min) / argon (flow 200ml / min) atmosphere, activated at a temperature of 500°C for 120 minutes, stop heating, and switch the gas flow It is borane, reacted at 180°C for 12 hours, and finally the temperature is naturally lowered to room temperature under an argon (flow rate of 200ml / min) mixed atmosphere to obtain devalent electron graphene.

Embodiment 3

[0027] Dissolve graphene oxide and polymethyl methacrylate, siloxane, sodium hydrosulfide, and triphenylphosphine in a mixed solution of cyclohexane and methylpyrrolidone (graphene: polymethyl methacrylate: silicone Alkane: sodium hydrosulfide: triphenylphosphine: cyclohexane and methylpyrrolidone mixed solution = 100g: 4g: 5g: 3g: 2g: 2L), ultrasonically stirred for 1.5 hours, remove the solvent, the obtained graphene / valence The electron remover mixture is placed in an atmosphere of carbon dioxide / water vapor (flow 200ml / min) / argon (flow 200ml / min) and activated at a temperature of 750°C for 120 minutes, then stop heating and switch the gas flow to propborane. The reaction was carried out at 150° C. for 24 hours, and finally the temperature was naturally reduced to room temperature in a mixed atmosphere of argon (flow rate of 200 ml / min) to obtain devalent electron graphene.

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Abstract

The invention discloses a method for removing valence electrons of graphene. The method includes the following steps that oxidized graphene and a valence electron remover are sequentially added into a solvent, the mixture is dispersed and mixed to be uniform through ultrasonic treatment, the solvent is removed, and an oxidized graphene / valence electron remover mixture is obtained; the oxidized graphene / valence electron remover mixture is put in mixed gas flow of inert gas and carbon dioxide / water steam for activation, the gas flow is switched into a boron-bearing gas-state compound, heat is preserved for 5-24 hours at the temperature of 150-230 DEG C, the material is cooled to room temperature, and the graphene with the valence electrons removed is obtained. The valence electrons between layers of the graphene are removed through catalysis of doping elements, the intermolecular force between the layers of the graphene is reduced, stacking and compounding between the slice layers of the graphene are avoided accordingly, the characteristic that the graphene attract is changed, the problem that the graphene is clustered in oil is effectively solved, and the situation that the performance of graphene is lost due to stacking and compounding of the slice layers in the using process is relieved.

Description

Technical field [0001] The invention belongs to the field of graphene modification, and relates to a method for graphene to devalent electrons. Background technique [0002] Graphene is a benzene ring structure material in which carbon atoms are tightly arranged in a two-dimensional space. In 2004, Novoselov of the University of Manchester in the United Kingdom used the mechanical exfoliation method to successfully prepare sp 2 The two-dimensional single-layer graphene crystal composed of hybrid connected single atomic layers is currently the thinnest material found in the world. Graphene has a special structure and strange physical properties. Each carbon atom in its structure has 4 valence electrons, of which 3 electrons (2s electrons, 2px electrons and 2py electrons) form a plane sp 2 Hybrid orbital, connecting 3 adjacent carbon atoms through σ bonds to form a hexagonal planar structure; the remaining one electron is located on the pz orbital in the normal direction and forms a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184
CPCC01B2204/22
Inventor 罗廷军
Owner CHONGQING DELING TECH
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