Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

electric field enhancement structure

A technology of electric field enhancement and electromagnetic wave, which is applied in material excitation analysis, fluorescence/phosphorescence, instruments, etc., can solve the problems of electric field enhancement limitation, temperature Raman signal enhancement performance degradation, changing the properties of metal particles and their surrounding detection substances, etc., to achieve Avoid direct contact and reduce heat loss

Active Publication Date: 2018-11-06
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase in the temperature of the metal particles will not only cause the degradation of its Raman signal enhancement performance in the detection of molecules in Raman spectroscopy, but also may change the properties of the metal particles and their surrounding detection substances, thereby enhancing the electric field of the metal particles. Limited use in some biomedical applications

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • electric field enhancement structure
  • electric field enhancement structure
  • electric field enhancement structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The specific embodiments of the electric field enhancement structure provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0022] figure 1 The X-axis, Y-axis and Z-axis respectively represent the X-axis, Y-axis and Z-axis.

[0023] see figure 1 , the electric field enhancement structure of the present invention includes a base layer 101, a dielectric layer 102 disposed on the surface of the base layer 101, an isolation layer 103 disposed on the surface of the dielectric layer 102, and a dielectric particle layer disposed on the surface of the isolation layer 103 104.

[0024] The dielectric particle layer 104 is formed by a plurality of dielectric particles 105, figure 1 Only one dielectric particle 105 is schematically indicated in . The dielectric particles 105 of the present invention are excited by electromagnetic wave radiation to generate an electromagnetic resonance mode of a certain frequency, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
refractive indexaaaaaaaaaa
Login to View More

Abstract

An electric field enhancing structure is provided. The electric field enhancing structure comprises a base layer, a medium layer on the surface of the base layer, a separating layer on the surface of the medium layer, and a dielectric particle layer on the surface of the separating layer. The dielectric particle layer is formed by a plurality of dielectric particles. The refractive index of the dielectric particles is higher than that of the separating layer. The electric field enhancing structure is advantageous in that the dielectric particles having the high refractive index interact with an incident electromagnetic field to generate a resonance electromagnetic coupling mode so that heat loss is greatly reduced, the dielectric particles are close to a metal and hold the separating layer having a certain low refractive index, the electromagnetic resonance mode of the dielectric particles interacts with a plasmon mode of adjacent metal so that a large electromagnetic enhanced field is formed between the dielectric particles and the metal, and existence of the separating layer low in refractive index can avoid direct contact between the metal and a detected object, thus effectively preventing Raman signal, fluorescence signal, and the like of the detected object from being quenched.

Description

technical field [0001] The invention relates to the field of optical field enhancement, in particular to an electric field enhancement structure for enhancing the intensity of an incident optical field. Background technique [0002] The collective oscillation of surface electrons generated by metal particles under the excitation and coupling of electromagnetic waves exhibits exotic optical properties, which are the so-called localized plasmon resonance properties. This kind of resonance of light and electrons can confine light on the surface of metal particles in the range of tens of nanometers or even smaller, and form a strong local electromagnetic field, localized plasmon of metal particles, super strong optical localization and optical field The enhanced properties make it show great application prospects in biosensors, surface-enhanced Raman spectroscopy, and fluorescence-enhanced spectroscopy. [0003] Surface-enhanced Raman spectroscopy based on metal particles is a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/64G01N21/65G01N21/01
Inventor 黄增立王建峰刘争晖徐耿钊钟海舰樊英民徐科
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products