Film transistor, preparation method thereof and logic circuit

A technology of thin-film transistors and logic circuits, which is applied in the field of semiconductor devices, can solve problems such as high power consumption of circuits, increase of process complexity, and failure of circuit functions, and achieve the effects of low power consumption, reduced process difficulty, and reduced production costs

CN106057911AInactive Publication Date: 2016-10-26SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2016-10-26
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a film transistor comprising a substrate, wherein a first structure layer and a second structure layer are successively formed on the substrate, and an insulating dielectric layer is arranged between the first structure layer and the second structure layer; first-Nth gate electrodes, a source electrode and a drain electrode are arranged in the first structure layer at intervals, and the source electrode and the drain electrode are connected through a semiconductor active area; a floating grate electrode is arranged in the second structure layer, the projection of the floating grate electrode on the first structure layer at least covers the partial area of the semiconductor active area and the partial area of each of the first-Nth gate electrodes, and N is an integer larger than 1. The invention further discloses a preparation method of the film transistor and a logic circuit including the film transistor. According to the invention, multi-input and single-output of the basic logic unit circuit are realized by one film transistor, and the process difficulty of the logic circuit is lowered.
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Description

Technical field

[0001] The invention relates to the technical field of semiconductor devices, in particular to a thin film transistor used in a logic circuit and a preparation method thereof, and also to a logic circuit. Background technique

[0002] With the development of thin film transistor technology, thin film transistor devices with high mobility and high stability are not only suitable for pixel circuits of flat panel displays, but also for integrating peripheral driving circuits on substrates. The driving circuit contains a number of basic logic unit circuits. These basic logic unit circuits are directly implemented by thin film transistors. A basic logic unit circuit includes multiple thin film transistors. For example, multiple input terminals of the logic unit circuit are connected to A thin film transistor. However, most of the current amorphous silicon or metal oxide thin film transistors are N-type thin film transistors. The circuit composed of N-type thin film tr...

Examples

Embodiment Construction

[0020] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the drawings. The embodiments of the present invention shown in the drawings and described in accordance with the drawings are merely exemplary, and the present invention is not limited to these embodiments.

[0021] Here, it should also be noted that, in order to avoid obscuring the present invention due to unnecessary details, only the structure and / or processing steps closely related to the solution according to the present invention are shown in the drawings, and the Other details not relevant to the present invention.

[0022] Refer to figure 1 with figure 2 , This embodiment first provides a thin film transistor, such as figure 1 As shown, the thin film transistor 100 includes a su...