Preparation method of a pseudo 1-3 structure magnetoelectric composite thin film
A technology of magnetoelectric composite and piezoelectric thin film, which is applied in the preparation of magnetoelectric composite thin film with pseudo-1-3 structure, and the field of preparation of magnetoelectric composite thin film, can solve the problem of poor magnetoelectric performance of thin film, difficult to control and produce the microstructure of thin film. The problem of high cost, to achieve the effect of high magnetoelectric coupling effect
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Embodiment 1
[0047] Using ethylene glycol as a solvent to prepare a sol with a concentration of 0.1mol / l, single crystal (100) oriented Pt / Ti / SiO 2 The / Si substrate was used as the substrate after ultrasonic cleaning, and 18 layers of BTFO piezoelectric matrix were deposited by the sol-gel method with a thickness of about 800nm, and annealed in air at 700°C for 15 minutes using a rapid thermal processing system RTP.
[0048] A mask plate with a cover aperture of 200 microns, holes arranged in 22 columns×25 rows, a column spacing of 0.6 mm and a row spacing of 0.5 mm is fixed on the base of the deposition chamber, and FeGa (atomic ratio 1:4) alloy target as the sputtering target.
[0049] Use mechanical pump and molecular pump to pre-evacuate, so that the vacuum pressure of the deposition chamber is equal to 3×10 -4 Pa, the buffer gas argon is introduced to make the chamber pressure reach 80Pa, the DC power supply is used, the current is 0.135mA, and the deposition beam current In the c...
Embodiment 2
[0055] According to the preparation process 1-3 structure magnetoelectric composite film of implementation 1:
[0056] Using ethylene glycol as a solvent to prepare a sol with a concentration of 0.1mol / l, single crystal (100) oriented Pt / Ti / SiO 2 The / Si substrate was used as the substrate after ultrasonic cleaning, and 15 layers of BTFO piezoelectric matrix were deposited by the sol-gel method with a thickness of about 600nm, and annealed in air at 700°C for 15 minutes using a rapid thermal processing system RTP.
[0057] A mask plate with a cover aperture of 200 microns, holes arranged in 22 columns×25 rows, a column spacing of 0.6 mm and a row spacing of 0.5 mm is fixed on the base of the deposition chamber, and FeGa (atomic ratio 1:4) alloy target as the sputtering target.
[0058] Use mechanical pump and molecular pump to pre-evacuate, so that the vacuum pressure of the deposition chamber is equal to 3×10 -4 Pa, the buffer gas argon is introduced to make the chamber pre...
Embodiment 3
[0060] According to the preparation process 1-3 structure magnetoelectric composite film of implementation 1:
[0061] Using ethylene glycol as a solvent to prepare a sol with a concentration of 0.1mol / l, single crystal (100) oriented Pt / Ti / SiO 2 The / Si substrate was used as the substrate after ultrasonic cleaning, and 20 layers of BTFO piezoelectric matrix were deposited by the sol-gel method with a thickness of about 900nm, and annealed in air at 700°C for 15 minutes using a rapid thermal processing system RTP.
[0062] A mask plate with a cover aperture of 200 microns, holes arranged in 22 columns×25 rows, a column spacing of 0.6 mm and a row spacing of 0.5 mm is fixed on the base of the deposition chamber, and FeGa (atomic ratio 1:4) alloy target as the sputtering target.
[0063] Use mechanical pump and molecular pump to pre-evacuate, so that the vacuum pressure of the deposition chamber is equal to 3×10 -4 Pa, the buffer gas argon is introduced to make the chamber pre...
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