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A way to improve bifeo 3 Annealing Method for Thin Film Magnetoelectric Coupling Effect

A technology of magnetoelectric coupling effect and thin film, which is applied in the direction of metal material coating process, coating, liquid chemical plating, etc., can solve the problem that the performance cannot meet the needs of microelectronic devices, and achieve the improvement of ferroelectricity and magnetoelectric coupling effect of effect

Active Publication Date: 2020-06-19
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But BiFeO 3 The performance of BiFeO can not meet the requirements of the application of microelectronic devices, especially the mutual restriction of ferroelectricity and ferromagnetism, so how to improve the BiFeO 3 Ferroelectricity and ferromagnetism are urgent problems to be solved

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] According to the above process, the prepared dry mold was placed in a rapid annealing furnace. The pretreatment temperature of the odd-numbered film samples was 300 °C, and the pre-treatment temperature of the even-numbered film samples was 400 °C, and the holding time was 150 s. The pyrolyzed film was annealed. The annealing temperature of the odd-numbered film sample was 400°C, the annealing temperature of the even-numbered film sample was 650°C, and the holding time was 400s to obtain a crystalline film sample. The two stages of wet film preparation and heat treatment film formation were repeated to obtain a film sample of required thickness, and the final number of layers of the prepared film was 16 layers.

Embodiment 2

[0017] According to the above process, the prepared dry mold was placed in a rapid annealing furnace. The pretreatment temperature of the odd-numbered film samples was 300 °C, and the pre-treatment temperature of the even-numbered film samples was 400 °C, and the holding time was 150 s. The pyrolyzed film was annealed. The annealing temperature of the odd-numbered film sample was 450°C, the annealing temperature of the even-numbered film sample was 700°C, and the holding time was 400s to obtain a crystalline film sample. The two stages of wet film preparation and heat treatment film formation were repeated to obtain a film sample of required thickness, and the final number of layers of the prepared film was 16 layers.

Embodiment 3

[0019] According to the above process, the prepared dry mold was placed in a rapid annealing furnace. The pretreatment temperature of the odd-numbered film samples was 300 °C, and the pre-treatment temperature of the even-numbered film samples was 400 °C, and the holding time was 150 s. The pyrolyzed film was annealed. The annealing temperature of the odd-numbered film sample was 500°C, the annealing temperature of the even-numbered film sample was 750°C, and the holding time was 400s to obtain a crystalline film sample. The two stages of wet film preparation and heat treatment film formation were repeated to obtain a film sample of required thickness, and the final number of layers of the prepared film was 16 layers.

[0020] Ferroelectricity (2Pr) Magnetic (2Mc) Example 1 98μC / cm 2

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Abstract

The invention discloses an annealing method for improving the magneto-electric coupling effect of a BiFeO3 thin film. A chemical solution deposition method is combined with a layer-by-layer annealingprocess, the BiFeO3 thin film is prepared with ITO / glass as the matrix, the odd layer of the thin film is annealed at the low temperature, and the even layer of the thin film is annealed at the high temperature. By using the combination mode of high and low temperature annealing, on the one hand, the fact that the even layer can form larger grains can be ensured, and the ferroelectric properties are enhanced; and on the other hand, the fact that the grain size of the odd layer is lower than 62 nm is ensured, the magnetism of the thin film is improved advantageously, the magneto-electric coupling effect of the BiFeO3 thin film is improved by using the annealing way.

Description

technical field [0001] The invention relates to the field of electronic information materials, in particular to a method for improving BiFeO 3 Annealing method for magnetoelectric coupling effects in thin films. Background technique [0002] BiFeO 3 It is a single-phase multiferroic material integrating ferroelectricity and magnetism. It has ferroelectric order and antiferromagnetic order at room temperature, and there is a coupling effect between ferroelectricity and magnetism. BiFeO 3 The ferroelectricity originates from its crystal structure, BiFeO at room temperature 3 Belonging to the R3c space group, it is a trigonal twisted rhombohedral perovskite structure, and its crystal structure is stretched along the [111] direction on the basis of the cubic structure, so that the iron oxide octahedron (FeO 6 ) is twisted around the [111] axis, so that a certain degree of spontaneous polarization appears in this direction, and its theoretical remanent polarization can reach ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1225C23C18/1283C23C18/1295
Inventor 张丰庆王玲续郭晓东刘慧莹范素华
Owner SHANDONG JIANZHU UNIV
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