Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic random access memory adopting heterojunction material

A random access memory, heterojunction technology, applied in the direction of material selection, magnetic field controlled resistors, electric solid-state devices, etc., can solve the problems of poor stability and high energy consumption, and achieve good stability, excellent performance, large exchange bias The effect of placement

Inactive Publication Date: 2020-06-05
NANJING UNIV OF POSTS & TELECOMM
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Purpose of the invention: The present invention provides a magnetic random access memory using heterojunction materials, which solves the problems of high energy consumption and poor stability in traditional magnetic random access memories

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic random access memory adopting heterojunction material
  • Magnetic random access memory adopting heterojunction material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] see figure 1 and figure 2 The magnetic random access memory using heterojunction materials according to an embodiment of the present invention includes a substrate 1 and a number of memory cells 2 distributed on the substrate 1 in an array, and each memory cell 2 includes a top Metal layer 3 , free layer 4 , oxide layer 5 , fixed layer 6 , Pt thin film layer 7 and pinning layer 8 . Moreover, a dielectric layer is provided between the free layers 4 of adjacent storage units 2 .

[0026] Among them, the top metal layer 3 and the pinned layer 8 are both made of PtMn material, the free layer 4 and the pinned layer 6 are both magnetic and made of La 0.7 Sr 0.3 MnO 3 / BiFeO 3 As a heterojunction material, the oxide layer 5 is made of MgO material.

[0027] The thickness of the top metal layer 3 and the pinning layer 8 are both 20nm, the thickness of the oxide layer 5 is 1.5nm, the thickness of the Pt thin film layer 7 is 0.6nm, the free layer 4 and the fixed layer 6 ar...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a magnetic random access memory adopting a heterojunction material. The magnetic random access memory comprises a substrate and a plurality of storage units distributed on thesubstrate in an array, and each storage unit sequentially comprises a top metal layer, a free layer, an oxide layer, a fixed layer and a pinning layer from top to bottom, wherein the top metal layer and the pinning layer are both made of PtMn materials, the free layer and the fixed layer are both magnetic and are made of La0. 7Sr0. 3MnO3 / BiFeO3 heterojunction materials, the oxidation layer is madeof an MgO material, and the fixing layer and the pinning layer are further provided with Pt film layers. According to the present invention, the power consumption of the magnetic random access memoryis reduced, and the stability and the running speed are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a magnetic random access memory using heterojunction materials. Background technique [0002] Memory is widely used in important fields such as computers, network storage, Internet of Things, and national security. It is a memory device used to store information in modern information technology. During the computing process of the computer, the input raw data, computer program, intermediate operation results and final operation results are all stored in the memory, which is one of the core components of modern information technology devices. [0003] With the development of modern information technology, people have put forward higher requirements for memory, hoping that memory will be smaller in size, larger in storage capacity, faster in reading and writing, more stable in data storage, and lower in power consumption. Using electric currents to manipulate magnetization ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L27/22H10N50/10
CPCH10B61/00H10N50/85H10N50/10
Inventor 丰媛媛王伟魏凤华
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com