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Method for melting of polycrystalline silicon ingot casting based on auxiliary heating

A polysilicon ingot furnace and auxiliary heating technology, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of polysilicon ingot quality decline, high oxygen content of ingot products, and low melting efficiency , to achieve the effect of easy control display, low investment cost, and easy fixing

Inactive Publication Date: 2016-11-09
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a melting method for polysilicon ingots based on auxiliary heating, which has simple steps, reasonable design, convenient implementation and easy mastery, and good use effect. It can solve the problems of low melting efficiency, poor heating effect, high oxygen content at the bottom of the finished ingot and polysilicon casting problems caused by insufficient melting time or too long melting time in the existing polysilicon ingot melting process. Ingot quality decline and other problems

Method used

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  • Method for melting of polycrystalline silicon ingot casting based on auxiliary heating
  • Method for melting of polycrystalline silicon ingot casting based on auxiliary heating
  • Method for melting of polycrystalline silicon ingot casting based on auxiliary heating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Such as figure 1 The shown method of melting material for polysilicon ingot based on auxiliary heating includes the following steps:

[0066] Step 1. Installation of auxiliary heater: install auxiliary heater in polysilicon ingot furnace 9;

[0067] The auxiliary heater is a bottom heater 3 arranged below the crucible 1, the crucible 1 is a cubic crucible and arranged horizontally, the bottom heater 3, the top heater 2 arranged above the crucible 1, and four The side heaters 4 respectively arranged outside the four side walls of the crucible 1 constitute a six-sided heating device; the top heater 2 and the bottom heater 3 are arranged horizontally, and the four side heaters 4 are all arranged horizontally. Vertically arranged; the top heater 2, the bottom heater 3 and the four side heaters 4 are all arranged in the polysilicon ingot furnace 9, see figure 2 ;

[0068] Step two, charging: the crucible 1 contained in the silicon material is loaded into the polysilicon ingot fur...

Embodiment 2

[0135] In this embodiment, the difference from embodiment 1 is: the preheating time in step 3 is 4h and T1=1285°C, P1=100kW; in step 401, T2=1400°C, in step 402, T3=1560°C, in step 403 t=20min, P2=45kW; Q1=650mbar in step 4; holding time in step 1 is 0.4h; in step 2 to step 5, T4=1190℃, heating time is 0.4h; in step 6 T5= 1460℃ and the heating time is 3.5h; in the 7th step T6=1510℃ and the heating time is 3.5h; in the 8th step T3=1560℃ and the heating time is 3.5h; the 9th step, the holding time is 3.5h; The holding time in 10 steps is 4h.

[0136] In this embodiment, the process of heating and pressurizing in steps 2 to 5 is as follows:

[0137] The second step and the first step up: increase the heating temperature of the polysilicon ingot furnace 9 from 1125°C to 1140°C, and the heating time is 9 minutes.

[0138] Step 3 and Step 2: Increase the heating temperature of the polysilicon ingot furnace 9 from 1140°C to 1155°C, and the heating time is 8 minutes.

[0139] Step 4 and Ste...

Embodiment 3

[0144] In this embodiment, the difference from embodiment 1 is: the preheating time in step 3 is 6h and T1=1125°C, P1=50kW, P2=25kW; T2=1350°C in step 401, T3=1540°C in step 402 , In step 403, t=40min; in step 4, Q1=550mbar; in step 1, the holding time is 0.6h; in steps 2 to 5, T4=1325℃, the heating time is 0.6h; in step 6 T5= 1440℃ and the heating time is 4.5h; in the 7th step T6=1490℃ and the heating time is 4.5h; in the 8th step T3=1540℃ and the heating time is 4.5h; in the 9th step, the holding time is 4.5h; The holding time in 10 steps is 8h.

[0145] In this embodiment, the process of heating and pressurizing in steps 2 to 5 is as follows:

[0146] The second step, the first step of upgrading: the heating temperature of the polysilicon ingot furnace 9 is increased from 1285°C to 1290°C, and the heating time is 5 minutes.

[0147] Step 3 and Step 2: Increase the heating temperature of the polysilicon ingot furnace 9 from 1290°C to 1295°C, and the heating time is 5 minutes.

[0...

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Abstract

The invention discloses a method for melting of a polycrystalline silicon ingot casting based on auxiliary heating. The method comprises a first step of installation of an auxiliary heater, wherein the auxiliary heater is installed in a polycrystalline silicon ingot casting furnace, the auxiliary heater is a bottom heater arranged below a crucible, and the auxiliary heater, a top heater and four side heaters form a six-side heating device; a second step of charging; a third step of preheating, wherein the six-side heating device is started and the polycrystalline silicon ingot casting furnace is adopted to preheat a silicon material in the crucible; a fourth step of melting, and the process comprises the following steps: a step 401 of primary warming, a step 402 of secondary warming and a step 403 of follow-up melting. The method is simple in steps, reasonable in design, convenient to achieve, easy to master and good in use effect, and the problems of low melting efficiency, poor heating effects, high oxygen content of the bottom of a finished ingot casting as well as reduction of polycrystalline silicon ingot casting quality caused by melting time insufficiency or too long melting time and the like can be solved.

Description

Technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingots, and in particular relates to a method for melting materials for polycrystalline silicon ingots based on auxiliary heating. Background technique [0002] Photovoltaic power generation is one of the most important clean energy sources and has great development potential. The key factors restricting the development of the photovoltaic industry are the low photoelectric conversion efficiency on the one hand, and the high cost on the other. Photovoltaic silicon wafers are the basic material for the production of solar cells and modules. The purity of polysilicon used to produce photovoltaic silicon wafers must be above 6N (that is, the total content of non-silicon impurities is below 1ppm), otherwise the performance of photovoltaic cells will be greatly negative influences. In recent years, polycrystalline silicon wafer production technology has made significant progress. Polycryst...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 李建军刘波波贺鹏蔺文虢虎平
Owner XIAN HUAJING ELECTRONICS TECH
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