Hall sensor and sensor device

A sensor device, Hall sensor technology, applied in the direction of measuring devices, instruments, measuring electrical variables, etc., can solve problems such as inconvenient recording, and achieve the effects of simple structure, convenient use and low cost

Inactive Publication Date: 2016-11-09
JILIN INST OF CHEM TECH
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the test, the current of the circuit needs to be detected, and the change of the current needs...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hall sensor and sensor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0015] see figure 1 , the present invention provides a technical solution: a Hall sensor and a sensor device, including: a circuit board 1, a Hall semiconductor chip 2, a measuring wire post 3, a permanent magnet 4, an amplifier circuit 5, a signal conversion module 6, an external display Device 7, the Hall semiconductor chip 2 is fixed on the circuit board 1, the measuring wire post 3 is respectively connected to the front and rear ends of the Hall semiconduc...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Hall sensor and sensor device. The Hall sensor and sensor device comprises the components of a circuit board, a Hall semiconductor plate, measuring terminals, permanent magnet blocks, an amplifying circuit, a signal converting module and an external display device. The Hall semiconductor plate is fixedly arranged on the circuit board. The measuring terminals are respectively connected with the front end and the back end of the Hall semiconductor plate. The permanent magnet blocks are fixedly connected with the surface of the Hall semiconductor plate. The amplifying circuit is arranged on the circuit board. The amplifying circuit is connected with the left side and the right side of the Hall semiconductor plate. The signal converting module is mounted on the circuit board. The external display device is connected with the signal converting module through a signal wire. The permanent magnet blocks are plate-shaped and furthermore two permanent magnet blocks are arranged. The permanent magnet blocks are respectively connected with the front side and the back side of the Hall semiconductor plate fixedly. The polarities of two adjacent surfaces of the two permanent magnet blocks are opposite from each other. The Hall sensor and sensor device has advantages of simple structure, reasonable design, high convenience in use, high use effect, easy popularization, etc.

Description

technical field [0001] The invention relates to the technical field of sensor equipment, in particular to a Hall sensor and a sensor device. Background technique [0002] The Hall sensor is a magnetic field sensor made according to the Hall effect. The Hall effect is a kind of magnetoelectric effect, which was discovered by Hall in 1879 when he was studying the conductive mechanism of metals. Later, it was found that semiconductors and conductive fluids also have this effect, and the Hall effect of semiconductors is much stronger than that of metals. Various Hall elements made of this phenomenon are widely used in industrial automation technology, detection technology and information processing, etc. aspect. The Hall effect is a basic method for studying the properties of semiconductor materials. The Hall coefficient measured by the Hall effect experiment can determine important parameters such as the conductivity type, carrier concentration, and carrier mobility of semic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01R19/00
CPCG01R19/0092
Inventor 王影刘麒张杰陈志敏
Owner JILIN INST OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap