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Linear slowly-changed memristor and preparation method therefor

A technology of a memristor and a resistive switching layer is applied in the field of device structure design and preparation of a new memristor, which can solve the problems of the memristor to be further studied, and achieve the effect of low power consumption and low preparation process.

Active Publication Date: 2016-11-09
PEKING UNIV
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Problems solved by technology

Although there are various materials and devices to realize memristors, memristors that meet the above requirements still need to be further researched.

Method used

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  • Linear slowly-changed memristor and preparation method therefor
  • Linear slowly-changed memristor and preparation method therefor
  • Linear slowly-changed memristor and preparation method therefor

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0026] The following examples adopt TaO respectively x and SiO 2 The new memristor devices are fabricated as resistive switching layer and diffusion modulation layer respectively. Materials used in key process steps are given, and examples of novel memristor devices are given.

[0027] Both tantalum oxide and silicon dioxide are materials compatible with standard CMOS processes. Tantalum oxide-based memristors have excellent memory properties, including ultrahigh endurance, ultrafast switching speed, and good retention characteristics. In addition, tantalum oxide has the characteristics of high thermal stability and chemical inactivity. As a gate dielectric material in a very mature CMOS process, silicon dioxide has very clear material properties and parameters, and its preparation is simple and very controllable. The combination of the ad...

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Abstract

The invention discloses a linear slowly-changed memristor and a preparation method therefor. According to the memristor, a diffusion modulation layer which has a modulation effect on ion diffusion rate is inserted in the interface between an electrode and a resistive switching material. Different modulation effects on the formation of conductive thin wires of the memristor and the ion diffusion rate in the fusing place can be achieved through the inserted diffusion modulation layer, so that the optimization on the memristor characteristic can be realized, and the device can present the characteristics of continuous and linear changes of the resistance value and closer approach to biological synapse; meanwhile, the device has the advantages of low power consumption and compatibility between the preparation process and the conventional CMOS process; and therefore, the linear slowly-changed memristor is of great significance to the final implementation of neural network computing hardware.

Description

technical field [0001] The invention belongs to the technical field of semiconductor and CMOS hybrid integrated circuits, and in particular relates to a device structure of a novel memristor suitable for a neuromorphic computing system of brain-inspired computing Design and method of preparation. Background technique [0002] With the rapid development of the semiconductor industry, non-von Neumann architecture brain-like neural network computing is expected to replace the traditional digital computing model based on von Neumann architecture in the future. The development of brain-like neural networks will lead to more powerful computing capabilities, which is expected to achieve powerful parallel processing capabilities, and brain-like neural network computing has stronger fault tolerance, and it also has a huge advantage in terms of power consumption. [0003] Devices with synaptic functions in neural network computing systems are important components of the entire neural...

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/023H10N70/8833
Inventor 杨玉超王宗巍殷明慧张腾蔡一茂王阳元黄如
Owner PEKING UNIV
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