MEMS (micro-electro-mechanical system) chip with getters and wafer level packaging method thereof

A technology of MEMS structure layer and getter, which is applied in decorative art, electrical components, measuring devices, etc., can solve the problems of increasing MEMS chip area, low utilization rate of side, and inability to completely cover vertical side, so as to increase surface area, Guaranteed vacuum effect

Inactive Publication Date: 2016-11-16
ANHUI BEIFANG XINDONG LIANKE MICROSYST TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patent EP2813465A1 describes making a getter on the MEMS structure layer, which will increase the area of ​​the MEMS chip or affect the performance of the MEMS chip
Patent US2016/0101976A1 describes that the surface area of ​​a rectangular cavity is increased by etching or depositing hemispherical polysilicon, and the getter is made on the surface of the rectangular c

Method used

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  • MEMS (micro-electro-mechanical system) chip with getters and wafer level packaging method thereof
  • MEMS (micro-electro-mechanical system) chip with getters and wafer level packaging method thereof
  • MEMS (micro-electro-mechanical system) chip with getters and wafer level packaging method thereof

Examples

Experimental program
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Effect test

Example Embodiment

[0033] Example one

[0034] MEMS chip with getter, such as image 3 As shown, it is composed of a cover plate 100, a MEMS structure layer 110, and a bottom plate 120. The cover plate 100 is formed with a cover plate sealing area 101, a cover plate bonding column 103 and two cover plate cavities 102, and their surfaces are covered with covers. The board insulating layer 130, whose material is SiO 2 The bottom of the cover cavity 102 is flat, the side surface can be inclined, or it can be perpendicular to the bottom, the depth of the cover cavity 102 is generally 2-100μm; through Si and SiO 2 The direct bonding process bonds a heavily doped Si wafer to the cavity side of the cover plate 100, and then grinds it to a desired thickness to form the MEMS structure layer 110. The MEMS structure layer 110 is divided by a deep Si etching process. The MEMS bonding area 111, the MEMS structure 112, and the MEMS bonding block 113 are three parts; the bottom plate 120 is made with a bottom plat...

Example Embodiment

[0035] Example two

[0036] MEMS chip with getter, such as Figure 4 As shown, it is composed of a cover plate 100, a MEMS structure layer 110 and a bottom plate 120. The cover plate 100 is formed with a cover plate sealing area 101, a cover plate bonding column 103, a window 104 and two cover plate cavities 102; In the cavity 102, there are a number of bevels composed of a slope 102b, a flat top 102c, and a bottom 102a, and a number of pyramids composed of a slope 102b, a spire 102d, and a bottom 102a. The slope 102b corresponds to figure 2 The inclined surface 16 of the middle pyramid 14 and the prism 13 is corresponding to the cover bonding column 103 and the flat top 102c figure 2 The edge 13 in the middle, the apex 102d corresponds to figure 2 In the pyramid 14, the height of the cover bonding column 103 and the flat top 102c is the same, the height of the apex 102d is smaller than the height of the flat top 102c, the cover sealing area 101 and the cover bonding column 103 ...

Example Embodiment

[0037] Example three

[0038] MEMS chip with getter, such as Figure 5 As shown, it is composed of a cover plate 100, a MEMS structure layer 110 and a bottom plate 120. The cover plate 100 is formed with a cover plate sealing area 101, a cover plate bonding column 103, a window 104 and two cover plate cavities 102. A cover insulating layer 130 is made on the surface of the cavity 102, the cover bonding column 103 and the cover sealing area 101, the material of which is usually SiO 2 , The bottom of the cover cavity 102 is flat, the sides can be inclined or perpendicular to the bottom, the depth of the cover cavity 102 is generally 2-10μm; through Si and SiO 2 The direct bonding process bonds a heavily doped Si wafer to the cavity side of the cover plate 100, and then grinds it to a desired thickness to form a MEMS structure layer 110. The MEMS structure layer 110 is divided into MEMS through a deep Si etching process. The structure 112, the MEMS bonding block 113 and the MEMS bond...

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Abstract

The invention discloses an MEMS (micro-electro-mechanical system) chip with getters and a wafer level packaging method thereof. The MEMS chip comprises a cover plate, an MEMS structure layer and a bottom plate, wherein cover plate cavities are formed in the lower surface of the cover plate; bottom plate cavities are formed in the upper surface of the bottom plate; the cover plate cavities and the bottom plate cavities jointly form seal cavities; MEMS structures are arranged in the seal cavities; cover plate insulating layers are arranged between the cover plate and the MEMS structure layer; the bottom plate is bonded with the MEMS structure layer by bottom plate bond layers; pyramids or frustums of prisms are manufactured in the cover plate cavities or the bottom plate cavities and are covered by getters. The pyramids or frustums of prisms are formed while the bottom plate cavities or the cover plate cavities are etched. A plurality of pyramids or frustums of prisms are manufactured in the seal cavities of the MEMS chip under the conditions that processing steps are not added and the area of the MEMS chip is not increased, and the getters are sputtered or evaporated on the surfaces the pyramids or frustums of prisms to increase the surface areas of the getters. The getters are used for adsorbing gas molecules in the seal cavities, ensuring the vacuum degrees of the seal cavities and providing a work environment with high vacuum degree for the MEMS structures.

Description

technical field [0001] The invention belongs to the field of chip packaging, in particular to a MEMS chip with a getter, and also relates to a wafer-level packaging method for the MEMS chip with a getter. Background technique [0002] The wafer-level packaging of MEMS chips is to seal the MEMS structure in a cavity with a cover plate and a bottom plate during the MEMS wafer manufacturing process; the function of the sealing cavity is to provide a free space for the MEMS structure sealed in the cavity. The space for movement, at the same time, ensures that the MEMS structure is not disturbed by the external environment. [0003] Some MEMS devices, such as gyroscopes and clock oscillators, use their MEMS structures to vibrate continuously under the drive of electrostatic force or inverse piezoelectric effect, which requires a sealed cavity on the MEMS chip to surround the MEMS structure. In a sealed cavity with a higher vacuum degree, the higher the vacuum degree in the seale...

Claims

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Application Information

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IPC IPC(8): B81C1/00B81B7/02B81B7/00
CPCB81C1/00B81B7/0032B81B7/02B81C1/00261B81C2203/01
Inventor 华亚平
Owner ANHUI BEIFANG XINDONG LIANKE MICROSYST TECH
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