MEMS (micro-electro-mechanical system) chip with getters and wafer level packaging method thereof
A technology of MEMS structure layer and getter, which is applied in decorative art, electrical components, measuring devices, etc., can solve the problems of increasing MEMS chip area, low utilization rate of side, and inability to completely cover vertical side, so as to increase surface area, Guaranteed vacuum effect
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[0033] Example one
[0034] MEMS chip with getter, such as image 3 As shown, it is composed of a cover plate 100, a MEMS structure layer 110, and a bottom plate 120. The cover plate 100 is formed with a cover plate sealing area 101, a cover plate bonding column 103 and two cover plate cavities 102, and their surfaces are covered with covers. The board insulating layer 130, whose material is SiO 2 The bottom of the cover cavity 102 is flat, the side surface can be inclined, or it can be perpendicular to the bottom, the depth of the cover cavity 102 is generally 2-100μm; through Si and SiO 2 The direct bonding process bonds a heavily doped Si wafer to the cavity side of the cover plate 100, and then grinds it to a desired thickness to form the MEMS structure layer 110. The MEMS structure layer 110 is divided by a deep Si etching process. The MEMS bonding area 111, the MEMS structure 112, and the MEMS bonding block 113 are three parts; the bottom plate 120 is made with a bottom plat...
Example Embodiment
[0035] Example two
[0036] MEMS chip with getter, such as Figure 4 As shown, it is composed of a cover plate 100, a MEMS structure layer 110 and a bottom plate 120. The cover plate 100 is formed with a cover plate sealing area 101, a cover plate bonding column 103, a window 104 and two cover plate cavities 102; In the cavity 102, there are a number of bevels composed of a slope 102b, a flat top 102c, and a bottom 102a, and a number of pyramids composed of a slope 102b, a spire 102d, and a bottom 102a. The slope 102b corresponds to figure 2 The inclined surface 16 of the middle pyramid 14 and the prism 13 is corresponding to the cover bonding column 103 and the flat top 102c figure 2 The edge 13 in the middle, the apex 102d corresponds to figure 2 In the pyramid 14, the height of the cover bonding column 103 and the flat top 102c is the same, the height of the apex 102d is smaller than the height of the flat top 102c, the cover sealing area 101 and the cover bonding column 103 ...
Example Embodiment
[0037] Example three
[0038] MEMS chip with getter, such as Figure 5 As shown, it is composed of a cover plate 100, a MEMS structure layer 110 and a bottom plate 120. The cover plate 100 is formed with a cover plate sealing area 101, a cover plate bonding column 103, a window 104 and two cover plate cavities 102. A cover insulating layer 130 is made on the surface of the cavity 102, the cover bonding column 103 and the cover sealing area 101, the material of which is usually SiO 2 , The bottom of the cover cavity 102 is flat, the sides can be inclined or perpendicular to the bottom, the depth of the cover cavity 102 is generally 2-10μm; through Si and SiO 2 The direct bonding process bonds a heavily doped Si wafer to the cavity side of the cover plate 100, and then grinds it to a desired thickness to form a MEMS structure layer 110. The MEMS structure layer 110 is divided into MEMS through a deep Si etching process. The structure 112, the MEMS bonding block 113 and the MEMS bond...
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