Silicon carbide single crystal manufacturing device

Abstract

The invention provides a silicon carbide single crystal manufacturing device, belonging to the technical field of semiconductor mechanical equipment and solving the problem that the post-mechanical processing loss of a single crystal grown by the existing silicon carbide single crystal manufacturing device is great. The silicon carbide single crystal manufacturing device comprises a furnace body and a crucible arranged in the furnace body, wherein a seed crystal retainer capable of mounting seed crystals is arranged at the upper part of the crucible; the seed crystal retainer can rotate and move up and down; a furnace body heater for heating the furnace body to enable the furnace body to form an environment temperature gradient is also arranged in the furnace body; and a heating cooler capable of acting on a silicon carbide single crystal is arranged outside the seed crystal retainer. On the premise of ensuring high quality of the silicon carbide single crystal, the silicon carbide single crystal manufacturing device grows the silicon carbide single crystal at a high speed, large-caliber growth of the silicon carbide single crystal is realized, and the post-mechanical processing loss is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor machinery and equipment, and relates to a silicon carbide single crystal manufacturing device. Background technique [0002] The sublimation method is currently the standard method for manufacturing silicon carbide crystals. Generally, intermediate frequency induction heating is used, that is, the silicon carbide in the crucible is heated and sublimated, and a seed crystal is placed above the crucible, so the gaseous silicon carbide rises and touches the seed crystal. After condensing and forming a silicon carbide single crystal. The heater heats the large environment in the furnace body, so it is difficult to precisely control the temperature of the crystal growth surface, and the current method is to directly set the temperature of the crystal growth surface at about 2250°C, but the carbonization directly grown at this temperature Silicon single crystals are prone to damage during subsequ...

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Problems solved by technology

The heater heats the large environment in the furnace body, so it is difficult to precisely control the temperature of the crystal growth surface, and the current method is to directly set the temperature of the crystal growth surface at about 2250°C, but the carbonization directly grown at this temperature Silicon single crystals are prone to damage during subsequent mechanical processing. In order to improve the quality of silicon carbide single crystals, the growth rate can only be reduced and the growth aperture can be reduced. In order to ensure the quality of silicon carbide crystals, the growth rate and the growth aperture can also be reduced Leading to the high cost of silicon carbide single crystal

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