Junction Termination Structures for Lateral High Voltage Power Devices

A power device and lateral high voltage technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low reliability and complex terminal design, and achieve the effects of improving reliability, avoiding early breakdown, and reducing complexity

Active Publication Date: 2019-04-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve are the defects of the traditional device charge imbalance and the curvature effect of the electric field at the junction, as well as the increasingly complicated terminal design and low reliability of devices with a vertical superjunction structure. terminal structure

Method used

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  • Junction Termination Structures for Lateral High Voltage Power Devices
  • Junction Termination Structures for Lateral High Voltage Power Devices
  • Junction Termination Structures for Lateral High Voltage Power Devices

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Embodiment Construction

[0024] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0025] A junction termination structure of a lateral high-voltage power device, including a straight junction termination structure and a curvature junction termination structure;

[0026] The curvature junction termination structure includes the drain N + Contact region 1, N-type drift region 2, P-type substrate 3, gate polysilicon 4, gate oxide layer 5, P-well region 6, source P + The contact region 8 and the annular isolation diel...

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Abstract

The invention provides a junction termination structure of a lateral high-voltage power device, including a straight junction termination structure and a curvature junction termination structure; the curvature junction termination structure includes a drain N + Contact region, N-type drift region, P-type substrate, gate polysilicon, gate oxide layer, P-well region, source P + Contact area and annular isolation dielectric; annular drain N + The contact area surrounds the annular N-type drift area, the annular N-type drift area surrounds the annular isolation medium, the annular isolation medium isolates the P-well area, the annular isolation medium is between the P-well area and the N-type drift area, and the P-well area and the N-type drift area. The type drift regions are not connected and the distance between them is L P , the present invention improves the problem of charge imbalance and electric field curvature effect in the part where the linear junction terminal structure and the curvature junction terminal structure are connected, avoids premature breakdown of the device, and thus obtains an optimized breakdown voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack and interdigitated structures. For the closed racetrack structure and the interdigitated structure, there will be small curvature terminations in the curved part and the fingertip part, and the electric field lines are easy to concentrate at the small curvature radius, which will lead to early avalanche breakdown of the device at the small curvature radius , which poses new challenges to the layout structure of lateral high-voltage power devices. [0003] The Chinese patent with publication number CN102244092...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/063H01L29/0634H01L29/0649H01L29/7823
Inventor 乔明于亮亮李路方冬杨文张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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