Junction Termination Structures for Lateral High Voltage Power Devices

Abstract

The present invention provides a junction termination structure of a lateral high-voltage power device, including a linear junction termination structure and a curvature junction termination structure; the curvature junction termination structure includes a drain N + Contact region, N-type drift region, P-type substrate, gate polysilicon, gate oxide, P-well region, source P + The contact region and the isolation medium, the isolation medium includes sub-dielectrics separated from each other; each sub-dielectric extends from the outside of the P-well region to the outside of the N-type drift region, and the annular drain N + The contact region surrounds the annular N-type drift region, the annular N-type drift region surrounds the annular isolation dielectric, the annular isolation dielectric isolates the P-well region, the annular isolation dielectric is between the P-well region and the N-type drift region, and the P-well region and the N-type drift region The type drift regions are not connected and the distance from each other is L P The invention improves the problem of charge unbalance and electric field curvature effect in the connecting part of the linear junction terminal structure and the curvature junction terminal structure, avoids the early breakdown of the device, and obtains the optimized breakdown voltage.

Description

Technical field [0001] The invention belongs to the field of semiconductor technology, and specifically relates to a junction terminal structure of a lateral high-voltage power device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from integrated horizontal high-voltage power semiconductor devices. Lateral high-voltage power semiconductor devices are usually closed structures, including circular, racetrack, and interdigital structures. For closed racetrack structures and interdigital structures, small curvature terminals will appear in the corners and fingertips, and the electric field lines are likely to be concentrated at the small curvature radius, which leads to the avalanche breakdown of the device at the small curvature radius in advance This poses new challenges for the layout structure of horizontal high-voltage power devices. [0003] The Chinese patent with publication number CN102244092A discloses a junction term...

AI Technical Summary

Problems solved by technology

[0004] What the present invention aims to solve are the defects of the traditional device charge imbalance and the curvature effect of the electric field at the junction, as well as the increasingly complicated terminal design and low reliability of devices with a vertical superjunction structure. terminal structure

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