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High-frequency High-output Device

A high output and equipment technology, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., to achieve the effect of relieving stress and preventing cracking

Active Publication Date: 2016-11-23
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology fails to solve the problem when the above-mentioned base plate is fixed by screws

Method used

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  • High-frequency High-output Device
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0029] figure 1 and figure 2 These are a perspective view and a cross-sectional view showing the high-frequency, high-output device according to Embodiment 1 of the present invention, respectively. image 3 and Figure 4 These are a perspective view and a plan view showing the inside of the high-frequency high-output device according to Embodiment 1 of the present invention, respectively.

[0030] The base plate 1 has a mounting portion 1a and a flange portion 1b. The attachment portion 1 a is arranged at the center of the base plate 1 in the longitudinal direction, and the flange portions 1 b are arranged on both sides of the attachment portion 1 a in the longitudinal direction. Notches 2 for inserting screws for fixing the base plate 1 are provided in the flange portion 1b. Here, the notches 2 are respectively provided with more than or equal to 1 place on the opposite short sides of the base plate 1 . In addition, an opening may be used instead of the notch 2 .

[00...

Embodiment approach 2

[0040] Figure 9It is a cross-sectional view showing a high-frequency high-output device according to Embodiment 2 of the present invention. In this embodiment, the V-groove 13 a is provided only on the upper surface of the base plate 1 between the mounting portion 1 a and the flange portion 1 b of the base plate 1 . The V-groove 13a is provided in the Cu plate 12, and its depth may or may not reach the Mo plate 11. In addition, the shape of the V-groove 13a may be a U-shape, a concave shape, etc., and the shape is not limited. Since the flange part 1b is easy to bend starting from this V-groove 13a, the same effect as Embodiment 1 can be acquired.

Embodiment approach 3

[0042] Figure 10 It is a cross-sectional view showing a high-frequency high-output device according to Embodiment 3 of the present invention. In the present embodiment, V-grooves 13 a and 13 b are provided at vertically different positions on the upper surface and the lower surface of the base plate 1 between the mounting portion 1 a and the flange portion 1 b of the base plate 1 . The V-grooves 13a and 13b are provided on the Cu plates 10 and 12, respectively, and the depth thereof may or may not reach the Mo plate 11. In addition, the shape of the V-grooves 13a and 13b may be a U-shape, a concave shape, etc., and the shape is not limited.

[0043] Since the flange part 1b is easy to bend starting from these V-grooves 13a and 13b, the same effect as Embodiment 1 can be acquired. In addition, by providing the V-grooves 13a and 13b at positions different from each other up and down on the upper surface and the lower surface of the base plate 1, it is possible to perform opti...

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PUM

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Abstract

The present invention aims to obtain a high-frequency high-output device. The high-frequency high-output device can prevent the crack and damage of parts on the condition of being installed (secondary installation) on a circuit substrate of a client. A base plate (1) has a mount portion (1a)and a flange portion(1b); a frame (5) is joined to an upper surface of the mount portion(1a),and a semiconductor chip (6) is mounted on the upper surface of the mount portion in the frame (5), wherein a cut (2)or an aperture in which a screw is inserted to fix the base plate is provided in the flange portion (1b), and a groove (13a, 13b) is provided between the mount portion and the flange portion of the base plate.

Description

technical field [0001] The invention relates to a high-frequency high-output device. Background technique [0002] In a high-frequency high-output device, terminals and a frame are soldered on a base plate, and within the frame, a semiconductor chip and a matching circuit substrate are mounted on the base plate. The inside of the frame is hermetically sealed by covering the upper surface of the frame with a cover. [0003] Considering the heat dissipation of the semiconductor chip and the matching of the coefficient of linear expansion between the semiconductor chip and the base plate, CuW material, Cu—Mo alloy material, Cu—Mo—Cu laminated material, etc. are used as the base plate. Recently, higher output of semiconductor chips has progressed, and Cu-Mo-Cu laminate materials with high heat dissipation properties have been used. [0004] Notches are respectively provided on opposite short sides of the base plate. The high-frequency high-output device is mounted on the alum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/492
CPCH01L23/492H01L23/13H01L23/142H01L23/4006H01L23/043H01L21/4803H01L2224/48091H01L2224/49111H01L23/3736H01L2224/291H01L2224/2919H01L24/48H01L24/49H01L2224/45144H01L2224/48157H01L23/66H01L2224/49175H01L24/45H01L24/29H01L2224/32245H01L24/32H01L23/562H01L2924/00014H01L2924/014
Inventor 宫胁胜巳西原达人
Owner MITSUBISHI ELECTRIC CORP
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