Aluminum-containing film layer pattern, manufacturing method and post processing method therefor

A production method and film layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., to achieve the effect of shortening the processing time, saving waiting time, and prolonging the cycle of daily maintenance

Inactive Publication Date: 2016-12-07
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a film layer pattern containing aluminum, its manufacturing method and its post-processing method to solve the problems caused by the processing after the existing dry etching process

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  • Aluminum-containing film layer pattern, manufacturing method and post processing method therefor
  • Aluminum-containing film layer pattern, manufacturing method and post processing method therefor

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Embodiment Construction

[0028] The specific implementation manners of the aluminum-containing film layer pattern provided by the embodiments of the present invention, its manufacturing method and its post-processing method will be described in detail below with reference to the accompanying drawings.

[0029] Specifically, due to the use of chlorine gas (Cl 2 ) gas, therefore, after dry etching, there will be residual chlorine gas on the surface of the patterned film layer containing aluminum (Al), and the metal aluminum in the patterned film layer will absorb the residual chlorine gas and carry out the following reaction : 2Al+3Cl 2 →2AlCl 3 ↑.

[0030] Therefore, if the dechlorination treatment is not carried out, when the patterned film layer is exposed to the air, the residual chlorine reacts with the metal aluminum in the patterned film layer to generate AlCl 3 Reacts with moisture in the atmosphere to form HCl. HCl will react with Al to form Al x Cl y . Al x Cl y Then react with moistu...

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Abstract

The invention discloses an aluminum-containing film layer pattern, a manufacturing method and a post processing method therefor. A patterned photoresist layer which covers a to-be-patterned aluminum-containing film layer is used as a mask, and the to-be-patterned film layer is subjected to a dry-etching process through chlorine-including gas; and then the formed patterned aluminum-containing film layer is subjected to dechlorination treatment and uninstalling of a bearing substrate at the same time. Due to that the dechlorination treatment and the uninstalling of the bearing substrate are carried out at the same time, the intermediate equipment waiting time is omitted, so that the processing duration of the overall post processing process is shortened, and the productivity can be improved; in addition, the dosage of the gas in the dechlorination treatment and the uninstalling of the bearing substrate can be reduced, so that the cost can be lowered; moreover, due to that the dosage of the gas in the dechlorination treatment and the uninstalling of the bearing substrate is reduced, the damage to the patterned photoresist layer can be lowered, suspension particles generated by attachment in equipment cavities are reduced, the probability of adverse residue generation in the subsequent substrate dry-etching process is lowered, and the daily maintenance period of the equipment is prolonged consequently.

Description

technical field [0001] The invention relates to the field of liquid crystal modules, in particular to a film layer pattern containing aluminum, a manufacturing method and a post-processing method thereof. Background technique [0002] At present, important components inside the display substrate include various patterned film layers, and some patterned film layers need to be formed by a dry etching process. For example, when forming the pattern of the data line, it is necessary to use chlorine gas (Cl 2 ) gas to dry-etch the titanium-aluminum-titanium (Ti / Al / Ti) composite film layer, because the residual chlorine gas and the surface of the patterned film layer will react with the moisture in the atmosphere, resulting in corrosion of the patterned film layer occur. Therefore, a dechlorination post-treatment process (AT step) is generally performed after the dry etching, and then the patterned film layer and the supported glass substrate are subjected to a separation treatme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213
CPCH01L21/32138H01L21/32139C23F4/00
Inventor 霍晓迪吴国特李淳东李知勋
Owner BOE TECH GRP CO LTD
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