Pressing ring apparatus and reaction chamber

Abstract

The invention provides a pressing ring apparatus and a reaction chamber. The pressing ring apparatus comprises pressing rings and supporting parts which are used for driving the corresponding pressing rings to move up and down; each supporting part comprises a stage surface; the stage surface is provided with a pin column; first through holes are formed in positions, corresponding to the pin columns, on the pressing rings correspondingly; the pin columns pass through the first through holes which are corresponding to the pin columns and are higher than the upper surfaces of the corresponding pressing rings; a blocking part is positioned in a position, which is higher than the upper surface of the corresponding pressing ring, on each pin column; and when the supporting parts jack up the corresponding pressing rings, a preset distance H is formed between the upper surface of the corresponding pressing ring and the lower surface of the corresponding blocking part. By adoption of the pressing ring apparatus provided by the invention, the inclination of the pressing rings or a condition that the pressing rings are separated from the supporting parts can be avoided, so that it is ensured that the pressing rings can accurately press the edge of a wafer; therefore, damage to the wafer can be further avoided; and the normal operation of wafer taking and wafer placement can be ensured.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a pressure ring device and a reaction chamber. Background technique [0002] In the field of deep silicon etching, etching machines are indispensable equipment in the production process. The quality of the corrosion results is mainly determined by the performance of the equipment process module itself. Therefore, it is necessary to continuously optimize the key technologies that affect the corrosion results. [0003] At present, due to the limitation of the glue-spinning equipment, the edge area close to the edge of the wafer 2-3mm generally cannot be coated with photoresist (used as a mask for etching patterns), resulting in the edge area of ​​the wafer being corroded during the wafer etching process , thereby causing the edge of the wafer to become thinner, and the edge of the wafer is easily broken after being thinned, causing damage and contamination of the wafer, ...

AI Technical Summary

Problems solved by technology

However, there will be such a problem: in a long-term process environment, the support member 14 of the resin material will melt due to high temperature or corrosion, and in severe cases, the pressure ring 13 will be deflected, thereby affecting the normal lifting of the pressure ring 13

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