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Antireflection film anti-PID performance testing method

A technology of anti-reflection film and testing method, which is applied in the monitoring of photovoltaic systems, photovoltaic power generation, photovoltaic modules, etc., can solve the problems of inability to rework, enterprise loss, scrap or downgrade, etc., and achieve easy operation and simple test cost Effect

Inactive Publication Date: 2016-12-21
成都富捷科技有限公司
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Problems solved by technology

[0005] However, the current anti-PID effect test standard for anti-reflection coatings is usually on the component side. Once the anti-PID performance of the component does not meet the requirements, it cannot be reworked because it has been packaged, so it can only be scrapped or downgraded, which will bring huge losses to the enterprise.

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Embodiment 1

[0027] A kind of test method of anti-reflection film anti-PID performance, comprises the steps:

[0028] (1) Take 4 groups of silicon wafers, respectively marked as sp1, sp2, sp3, and sp4, wherein sp1 and sp3 each have 20 pieces, and sp2 and sp4 each have 100 pieces, and are cleaned and textured according to the conventional battery manufacturing process. sp2 and sp4 conventional cell manufacturing process diffusion.

[0029] (2) After texturing / diffusion, sp1 and sp2 are simultaneously coated with anti-reflective coating according to the normal process of the production line; sp3 and sp4 are simultaneously coated with anti-PID coating process with anti-reflective coating. Sp1 and sp3 are sintered and annealed, and sp2 and sp4 are printed and sintered normally.

[0030] (3) Five silicon wafers were selected from each group of sp1 and sp3 silicon wafers to measure the anti-PID performance of the anti-reflection coating. The test results are figure 1 and figure 2 . From f...

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Abstract

The invention relates to an antireflection film anti-PID performance testing method. The method includes the following steps that: (1) washing, texturizing, antireflection film plating, sintering and annealing are carried out on a silicon wafer sequentially; (2) charges are continuously dispersed on the surface of the obtained silicon wafer in the step (1), the voltage value of the surface of the silicon wafer is detected; and (3) the surface voltage of the silicon wafer is compared with the quantity of the charges, if the surface voltage of the silicon wafer is increased linearly with the quantity of the charges, it is indicated that the insulation performance of the antireflection film is excellent, the anti-PID performance of a subsequent battery or assembly is good, otherwise, it is indicated that the insulation performance of the antireflection film is poor, and the anti-PID performance of the subsequent battery or assembly is poor. With the testing method provided by the invention adopted, the anti-PID effect of the antireflection film can be quickly and accurately tested in a battery manufacturing process, and therefore, waste caused by assembly testing can be decreased.

Description

technical field [0001] The invention belongs to the field of performance testing of crystalline silicon / silicon wafers in the photovoltaic industry, and in particular relates to a method for testing anti-PID performance of an anti-reflection film. Background technique [0002] Today, when traditional energy sources are gradually exhausted and the environment is deteriorating, solar photovoltaic power generation is sought after by people for its inexhaustible, clean and pollution-free advantages. Among the effective utilization of solar energy, solar photovoltaic utilization is the fastest-growing and most dynamic research field in recent years, and it is one of the most watched projects. To this end, people have researched and developed solar cells. The production of solar cells is mainly based on semiconductor materials, and its working principle is to use photoelectric materials to absorb light energy and generate photoelectric conversion reactions. [0003] According to...

Claims

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Application Information

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IPC IPC(8): H02S50/10
CPCH02S50/10Y02E10/50
Inventor 崔会英钱亮蒋硕仲崇娇嵇友谊钱晟浩
Owner 成都富捷科技有限公司
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