Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Indeno heteroanthracene compound and application thereof

A technology of heterocyclic compounds and compounds, which is applied in the field of compounds, can solve the problems of low Tg, easy crystallization of small molecule host materials, etc., and achieve the effects of increasing Tg, reducing crystallization, and good thermal stability

Active Publication Date: 2017-01-04
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the urgent requirement in this field for a host material that is more beneficial to the field of OLEDs, the present invention provides an indenoxanthracene compound and its application as a host material, which can not only solve the problem of easy crystallization of small molecule host materials and some The shortcoming of low Tg of the wide-band host material, and the introduction of groups with electron-pushing properties and electron-withdrawing properties into the structure can balance the electron and hole conduction properties of the host material and improve device efficiency.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Indeno heteroanthracene compound and application thereof
  • Indeno heteroanthracene compound and application thereof
  • Indeno heteroanthracene compound and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] 1. Preparation process

[0032]

[0033] 2. Preparation method

[0034] The first step: under nitrogen protection, charge 3-hydroxy-9,9-dimethylfluorene (22.1g, 0.11mol , 1.1eq), 4-bromo-3-nitrobiphenyl (27.7g, 0.1mol, 1.0eq), K2CO3 (31.8g, 0.3mol, 3.0eq), then 1L of acetone was added to the above mixture, and then the circle The mixture in the bottom flask was reacted at 60°C for 16 hours and then cooled to room temperature.

[0035] The contents in the above-mentioned cooled flask were spin-dried, and 600mL deionized water and 600mL ethyl acetate were added to the residue, stirred at 30°C for 30 minutes, then left to stand, and after the organic phase and the aqueous phase were separated, the The two separate. The separated organic phase was successively washed with water 3 times (600 mL each time) and saturated brine 3 times (600 mL each time). The washed organic phase was dried with anhydrous sodium sulfate, filtered and spin-dried, and the resulting substanc...

Embodiment 2

[0047] 1. Preparation process

[0048]

[0049] 2. Preparation method

[0050] The first step: Using the same reaction conditions as the first step of CPD 1, compound 1 and compound 5 were reacted under certain conditions to obtain compound 6 (33.59 g, yield: 82%).

[0051]The second step: using the same reaction conditions as the second step of CPD 1, compound 6, triethyl phosphite and 1,2-dichlorobenzene were reacted under certain conditions to obtain compound 7 (13.5g, yield: 72%).

[0052] The third step: using the same reaction conditions as the third step of CPD 1, compound 7 and 4-bromopyridine were reacted under certain conditions to obtain CPD 2 (5.92 g, yield: 65.7%).

[0053] 3. Products

[0054] Among them, the relevant characterization data of the product CPD 2 are as follows:

[0055] MS: m / z=454.19 (M+H+); 1HNMR (400M, d-CDCl3): 8.67 (d, 2H), 8.45 (d, 2H), 7.55-7.85 (m, 4H), 7.25-7.38 (m ,3H),6.65-6.98(m,6H),1.67(s,6H);

[0056] Elemental analysis: C31H...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an indeno heteroanthracene compound which is characterized by having a structure represented by the general formula (I), wherein X and Y are independently selected from NR, O, S, SO, SO2, SiR2, CR2, PR and POR, and R is selected from substituted or unsubstituted phenyl, benzene-containing compound groups, heterocyclic compound groups and polycyclic aromatic hydrocarbon groups. The invention also provides an OLED phosphorescent host material containing the compound and an OLED device containing the compound. The invention provides the indeno heteroanthracene compound and an application thereof as the main material; the shortcomings that small-molecular main materials are easy to crystallize and some wide-band main materials have low Tg are solved, and moreover, because groups having electron donating properties and groups having electron withdrawing properties are simultaneously introduced in the structure, conduction performance of electrons and holes of the main material can be balanced, and the efficiency of the device is improved.

Description

technical field [0001] The invention relates to a compound, in particular to an indeno-xanthracene compound and its application. Background technique [0002] Organic light-emitting diodes (OLEDs), as a brand-new display technology, have unparalleled advantages of existing display technologies in various performances, such as all-solid-state, self-luminous, high brightness, high resolution, wide viewing angle (170 degrees Above), fast response, thin thickness, small size, light weight, flexible substrate, low voltage DC drive (3-10V), low power consumption, wide operating temperature range, etc., making it a very wide range of application markets, such as Lighting systems, communication systems, vehicle displays, portable electronic devices, high-definition displays, and even military fields. [0003] At present, almost all the light-emitting layers in organic light-emitting diode devices use the host-guest emitter system structure, that is, the guest emitter material is do...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07D265/34C07D413/14H01L51/54
CPCC07D265/34C07D413/14H10K85/631H10K85/657H10K85/6572
Inventor 鄢亮亮任军龚智豪李潍萌
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products