A self-selectively modified nanowire biosensor and its preparation method
A biosensor and nanowire technology, applied in the field of biosensors, can solve the problems of insufficient signal strength, non-uniform nanowires, incompatible integrated circuit manufacturing technology, etc., and achieve the effects of sensitive perception, low cost and simple process
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[0039] The present invention will be further elaborated below through specific embodiments in conjunction with the accompanying drawings.
[0040] The preparation method of the self-selectively modified N-channel nanowire biosensor of this embodiment comprises the following steps:
[0041] 1) On a semiconductor substrate 1 of bulk silicon (100) SiO 2 , Si 3 N 4 stack structure as isolation layer 2, SiO 2 is to buffer Si 3 N 4 and the stress between the semiconductor substrate, such as figure 1 shown;
[0042] 2) On isolation layer 2 Polycrystalline silicon is used as the active layer 3, and ion implantation of As+ is performed, the implantation energy is 40Kev, and the implantation dose is 5E13cm -2 , RTP 950°C, annealing 5s, such as figure 2 shown;
[0043] 3) PECVD SiO 2 As a mask layer, electron beam photoresist is spin-coated on the surface of the mask layer, the first photoresist pattern glue is formed by electron beam exposure, and the mask layer is e...
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