Super-junction device manufacturing method and super-junction device

Abstract

The invention provides a super-junction device manufacturing method and a super-junction device. The method comprises the following steps of forming an epitaxial layer on a substrate and forming an oxide layer mask film on the epitaxial layer; carrying out photoetching and etching on the oxide layer mask film, and under masking of the oxide layer mask film, etching a groove on the epitaxial layer; forming an oxide layer in the groove, and using surface planarization processing so that the oxide layer is flushed with a top of the epitaxial layer; forming a gate oxide layer and a polysilicon gate above the oxide layer. By using the super-junction device manufacturing method and the super-junction device, the groove is formed on the epitaxial layer and the oxide layer is formed in the groove so that a gate-drain capacitance can be effectively reduced, switch time of the device is decreased and switch losses of the device are reduced. Compared to the prior art, by using the method and the device of the invention, a thickness of the gate oxide layer is not increased and dynamic performance of the device is not influenced.

Description

technical field [0001] The invention relates to integrated circuit manufacturing technology, in particular to a method for manufacturing a super junction device and a super junction device. Background technique [0002] The drain and source poles of the superjunction device are located on both sides of the device, and the current flows vertically inside the device during operation, which increases the current density, improves the rated current, and the on-resistance per unit area is also small. It is a very useful Wide range of power devices. [0003] Operating loss is the most important performance parameter of super junction devices, which can be divided into three parts: conduction loss, cut-off loss and switching loss. The conduction loss is determined by the on-resistance, the cut-off loss is affected by the reverse leakage current, and the switching loss It refers to the loss caused by the charging and discharging of parasitic capacitance during the switching process...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for manufacturing a super-junction device and a super-junction device, which are used to solve the technical problem of large gate-to-drain capacitance of super-junction devices in the prior art

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