Super-junction device manufacturing method and super-junction device
A superjunction device and epitaxial layer technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as large gate-to-drain capacitance, reduce gate-to-drain capacitance, reduce switching loss, and reduce switching time. Effect
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[0042] Example one
[0043] The first embodiment of the present invention provides a method for manufacturing a super junction device. figure 1 This is a flowchart of the method for manufacturing a super junction device provided by this embodiment. Such as figure 1 As shown, the method for manufacturing a super junction device in this embodiment may include:
[0044] Step 101, an epitaxial layer 2 is formed on the substrate 1, and an oxide layer mask 4 is formed on the epitaxial layer 2.
[0045] Specifically, the epitaxial layer 2 in this embodiment may be an N-type epitaxial layer, and the substrate 1 may be an N-type substrate. The method of forming an N-type epitaxial layer and an N-type substrate belongs to the prior art. Repeat it again.
[0046] The method provided in this embodiment, after forming the epitaxial layer 2 on the substrate 1, and before forming the oxide layer mask 4 on the epitaxial layer 2, may further include: forming a super junction P pillar in the epitaxial...
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[0059] Example two
[0060] The second embodiment of the present invention provides a super junction device. For the super device provided in this embodiment, see Picture 10 . Such as Picture 10 As shown, the super junction device in this embodiment may include: a substrate 1, an epitaxial layer 2 formed on the substrate 1, an oxide layer 6, and a gate oxide layer formed on the oxide layer 6. 9. And the polysilicon gate 10 formed on the gate oxide layer 9;
[0061] Wherein, the epitaxial layer 2 is provided with a groove 5, the oxide layer 6 is located in the groove 5, and the oxide layer 6 is flush with the top of the epitaxial layer 2.
[0062] Specifically, the epitaxial layer 2 may be an N-type epitaxial layer. Correspondingly, the superjunction device in this embodiment may further include: a superjunction P pillar structure 3 and a P-type body formed in the epitaxial layer 2 Region 7, N-type source region 8, and dielectric layer 11 and metal layer 12 formed on the polysi...
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