N type MOS (metal oxide semiconductor) tube with convex enhanced type grid substrate

Abstract

The invention discloses N type MOS (metal oxide semiconductor) tube with a convex enhanced type grid substrate, comprising a silicon substrate; both ends of the silicon substrate are isolating zones made of silicon oxide; a transition layer is arranged between the isolating zone and the silicon substrate; the middle of the silicon substrate is a polysilicon gate; the bottom part of the polysilicon gate is upwards raised; a silicon dioxide is arranged between the bottom part of the polysilicon gate and the silicon substrate; the top part of the polysilicon gate is titanium polycrystalline silicon compound; N type mixed source zone and drain zone are arranged between the polysilicon gate and the isolating zone and in the silicon substrate; both ends of the polysilicon gate are provided with side walls. In the invention, the substrate of the grid is upwards raised and can be applied to the connection and disconnection of control circuits at both sides of the circuit. The design can largely improve the circuit control and reduce leakage, and also largely shorten the gate length of a transistor.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to an N-type MOS transistor with a raised gate substrate. Background technique [0002] In the prior art, the size of the MOS transistor is getting smaller and smaller. If the size of the enhanced N-type MOS transistor is too small, the gate control current of the transistor is also very small, which is not easy to adjust, and the control accuracy is poor. Contents of the invention [0003] Aiming at the deficiencies of the prior art, the invention discloses an N-type MOS transistor with an enhanced gate substrate protrusion. [0004] Technical scheme of the present invention is as follows: [0005] An N-type MOS transistor with an enhanced gate substrate protruding, including a silicon substrate; two ends of the silicon substrate are isolation regions made of silicon oxide; the isolation region and the silicon substrate There is a transition layer between them; t...

AI Technical Summary

Problems solved by technology

[0002] In the prior art, the size of the MOS transistor is getting smaller and smaller. If the size of the enhanced N-type MOS transistor is too small, the gate control current of the transistor is also very small, which is not easy to adjust, and the control accuracy is very poor.

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