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Compound semiconductor monocrystal growing device and method

A growth device and semiconductor technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problem of low temperature control accuracy in temperature field

Inactive Publication Date: 2017-02-15
FIRST SEMICON MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In summary, how to solve the problem of low temperature control accuracy of the temperature field has become a technical problem to be solved urgently by those skilled in the art

Method used

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  • Compound semiconductor monocrystal growing device and method
  • Compound semiconductor monocrystal growing device and method
  • Compound semiconductor monocrystal growing device and method

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Embodiment Construction

[0042] The core of the present invention is to provide a compound semiconductor single crystal growth device and method to improve the temperature control accuracy of the temperature field during the compound semiconductor single crystal growth process.

[0043] In order to enable those skilled in the art to better understand the technical solutions provided by the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0044] Such as Figure 1-3 As shown, the compound semiconductor single crystal growth device provided by the embodiment of the present invention includes a pressure vessel 1 and a pyrolytic boron nitride crucible, and also includes a graphite crucible assembly 3 arranged inside the pressure vessel 1, and the inside of the pressure vessel 1 is provided with graphite A thermal field assembly 2, and the graphite thermal field assembly 2 is used to heat the graphite...

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Abstract

The invention discloses a compound semiconductor monocrystal growing device, which comprises a pressure container and a pyrolytic boron nitride crucible and also comprises a graphite crucible assembly arranged in the pressure container, wherein a graphite thermal field assembly is arranged in the pressure container and is used for heating the graphite crucible assembly; the graphite crucible assembly comprises a graphite crucible body, a graphite crucible cover and a graphite sealing ring, the graphite sealing ring is hermetically connected with an upper opening of the graphite crucible body, the pyrolytic boron nitride crucible can be put into the graphite crucible body, and hermetic connection is detachable connection; a groove for placing a sealing substance is formed above the graphite sealing ring, the graphite crucible cover can be embedded into the groove, and the sealing substance is a solid substance with the melting point of less than 500 DEG C. The compound semiconductor monocrystal growing device improves the temperature control precision of a temperature field in the compound semiconductor monocrystal growing process. In addition, the invention also discloses a compound semiconductor monocrystal growing method.

Description

technical field [0001] The invention relates to the field of semiconductor single crystal technology, in particular to a compound semiconductor single crystal growth device and method. Background technique [0002] GaAs (gallium arsenide) is the second-generation semiconductor material after Ge (germanium) and Si (silicon). The development of semiconductors has seen several leaps in the application of semiconductors with the emergence of new materials in different periods. Before the 1990s, in the field of semiconductors, silicon-based semiconductors occupied an absolute dominant position in the market. However, technically speaking, due to the limitations of its material properties, the application range of silicon in the field of microelectronics can no longer meet the requirements of the development of modern information technology. With the high development of silicon-based microelectronics technology, ultra-fine processing pushes its integration and speed to the limit....

Claims

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Application Information

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IPC IPC(8): C30B11/00
CPCC30B11/00
Inventor 易明辉雷仁贵高鹏飞朱刘
Owner FIRST SEMICON MATERIALS
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