Manufacturing method of LED packaging device and the LED packaging device

Abstract

A manufacturing method of a LED packaging device comprises the following steps of S01, making a substrate; S02, arranging an inverted LED chip on an upper surface of the substrate; S03, covering reflecting layers on a side surface and a top surface of the LED chip; S04, grinding the reflecting layer on the top surface of the LED chip so that the LED chip is exposed, and forming a rough surface on the top surface of the reflecting layer; and S05, covering packaging colloids on the LED chip and the top surface of the surrounding reflecting layer and then carrying out solidification. The manufacturing method of the LED packaging device possesses the following advantages that 1, the overflown or residual reflecting layer can be ensured not to exist on the top surface of the LED chip and top surface light emitting is not influenced; and 2, through grinding, the top surface of the reflecting layer possesses a rough structure, and the rough structure is good for tight combination of the reflecting layer and the packaging colloids, bubbles are prevented from generating, the structure is compact and light emitting quality is high.

Description

technical field [0001] The invention relates to a method for manufacturing a light emitting device, in particular to a method for manufacturing an LED packaging device and the LED packaging device. Background technique [0002] LED packaging refers to packaging LED light-emitting chips in a certain structure to achieve the effect of protecting the wick, and at the same time, the packaging structure can transmit light. At present, GaN-based LED (GaN-based LED means that the light-emitting chip is made of GaN or the main phase is made of GaN crystal) packaging mainly has three types: front-mount structure, flip-chip structure and vertical structure. [0003] For positive-mount LEDs, the GaN-based LED structure layer is generally grown on the sapphire substrate by MOCVD technology, with the P electrode on the top and the N electrode on the bottom, and the light is emitted through the P-type region above. Due to the poor conductivity of P-type GaN, in order to obtain good curre...

AI Technical Summary

Problems solved by technology

[0006] In production, LEDs that only emit light from the top surface are often required. The existing LED packaging technology has the following defects: 1. Light is emitted from the top and side surfaces of the LED light-emitting chip, and the light emitted from the side is not conducive to the light distribution design of the secondary lens, especially Ground, for white light LED devices, it is easy to produce bad light distribution phenomena such as yellow rings and basket rings, which affect the lighting and display quality; 2. The implementation process of phosphor encapsulation and colloid coating on the side is relatively difficult, and it is difficult to control the uniformity of phosphor coating , consistently wrapping the sides

It has the following defects: first, there is a certain distance between the reflective surface or the reflective cup and the LED chip, and the reflection effect is general; Coating, not only the process is complicated, but also easy to affect the chip

Although this technical solution discloses covering the reflective silica gel around the LED chip, it adopts the method of dispensing glue to cover the reflective silica gel, which has three major defects: first, its production efficiency is low, and second, because the silica gel colloid covers the surrounding of the LED chip. surface tension, the colloid is difficult to form a flat surface, and may overflow to the top surface of the LED chip, hindering the light from the top surface, and also makes it difficult for the encapsulation colloid covering the LED chip and reflective silica gel to be uniform and flat Coating; the third is that the dispensing method is easy to generate tiny bubbles between the LED chip and the colloid, which affects the quality of light output

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