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Quantum-dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problem of high electron affinity of the electron transport layer

Inactive Publication Date: 2017-02-15
TCL CORPORATION
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  • Abstract
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  • Claims
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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of high electron affinity of the electron transport layer of the existing QLED device

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  • Quantum-dot light-emitting diode and preparation method thereof

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Embodiment Construction

[0026] The present invention provides a quantum dot light-emitting diode and a preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] see figure 1 , figure 1 It is a schematic structural diagram of the first embodiment of the quantum dot light-emitting diode of the present invention, as figure 1 As shown, it includes from bottom to top: substrate 10, bottom electrode 11, hole injection layer 12, hole transport layer 13, quantum dot light-emitting layer 14, electron transport layer 15 and top electrode 16; wherein, the electron transport layer The material of 15 is an amorphous oxide semiconductor.

[0028] Amorphous oxide semiconductor (AOS) is a class of materials with excellent e...

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Abstract

The invention discloses a quantum-dot light-emitting diode and a preparation method thereof. The quantum-dot light-emitting diode is composed of a substrate, a bottom electrode, an electron transfer layer, a quantum-dot light-emitting layer, a hole transport layer, a hole injection layer, and a top electrode successively from bottom to top. Or the quantum-dot light-emitting diode comprises a substrate, a bottom electrode, a hole injection layer, a hole transport layer, a quantum-dot light-emitting layer, an electron transfer layer, and a top electrode successively from bottom to top. The electron transfer layer is made of an amorphous-form oxide semiconductor. According to the invention, the amorphous-form oxide semiconductor is used for replacing the conventional organic material to prepare an electron transfer layer, thereby reducing the electron affinity of the electron transfer layer effectively without changing properties of the material of the electron transfer layer obviously.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method. Background technique [0002] Quantum dot luminescent materials based on inorganic nanocrystals have the advantages of saturated color of emitted light, adjustable wavelength, high photoluminescent and electroluminescent quantum yields, and are suitable for high-performance display devices. From the perspective of preparation technology, quantum dot luminescent materials are suitable for spin coating, printing, and printing equipment under non-vacuum conditions. Therefore, quantum dot light-emitting diodes (QLEDs) prepared with quantum dot films have become a strong competitor for next-generation display technologies. [0003] A QLED device usually includes an electrode 1, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer (injection layer) and an electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H10K2102/00H10K71/00
Inventor 陈崧钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
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