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Temperature field device for vertical HVPE growth equipment

A vertical, equipment-based technology, applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems of large space occupation, high equipment height, easy fluctuations, etc., to improve quality, reduce equipment manufacturing costs, temperature field stable effect

Active Publication Date: 2017-02-22
SINO NITRIDE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the development of semiconductor industry technology, the products in the field of semiconductor industry material growth are constantly improving, and the requirements for temperature field control in the production process are getting higher and higher. In the field of semiconductor production, especially in the field of material growth in the HVPE field, heating is widely used. HVPE refers to hydride meteorological epitaxy. The key is to ensure the constant temperature field and high-precision control of the heating furnace. Longer, resulting in a high equipment height and a large space occupation, and in the vertical HVPE (Hydride Vapor Epitaxy) growth equipment, the temperature field in the lowest temperature zone is prone to instability and fluctuations

Method used

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  • Temperature field device for vertical HVPE growth equipment
  • Temperature field device for vertical HVPE growth equipment
  • Temperature field device for vertical HVPE growth equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment one, as attached Figure 1-3 As shown, the telescopic connector is a sleeve connector 5, which includes a sleeve and a flange, and the sleeve connector 5 is movably connected by at least two sleeves. The uppermost sleeve is connected to the upper part of the lifting rod 4, and the lowermost sleeve is connected to the heat insulation layer. When the lifting rod 4 moves upward, the sleeve of the sleeve connector 5 moves upward, and the sleeves of each layer are pulled apart. After the sleeve connector 5 is fully pulled apart, the distance between the heat insulation layer 6 and the substrate support plate 3 reaches the maximum, and the heat insulation layer moves upward with the lifting rod 4 , and the sleeve connector 5 Descending together with the heat insulation layer 6, when the heat insulation layer descends to contact with the workbench inside the heater, the heat insulation layer is blocked, the lifting rod continues to descend, and the sleeve connector ...

Embodiment 2

[0027] Embodiment two, as attached Figure 3-6 As shown, the telescopic connector is a chain connector, the chain connector includes a chain 7 and a connecting ring 71, the upper end of the chain is connected to the upper part of the elevating rod 4 through the connecting ring 71, and the connecting ring 71 is fixed on the upper part of the elevating rod 4 Below the substrate support plate 3, the lower end of the chain 7 is connected to the heat insulation layer 6, and the lifting rod 4 can not only lift up and down but also rotate. When the lifting rod 4 rotates up, the chain 7 is straightened, and the substrate support plate 3 and the The distance between the heat insulation layers 6 reaches the maximum, and the heat insulation layer 6 moves upwards with the lifting rod. When the lifting rod rotates and descends, when the heat insulation layer 6 contacts the workbench arranged below the inside of the heater 2, the heat insulation layer 6 is blocked by the workbench and no lo...

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Abstract

The invention provides a temperature field device for vertical HVPE growth equipment, which comprises a reactor and a heater. The lower part of the reactor is sleeved inside the heater. The heater is internally provided with a lifting rod. The top end of the lifting rod is provided with a substrate support plate. A thermal insulation layer is movably sleeved onto the lifting rod. A telescopic connector is arranged between the thermal insulation layer and the substrate support plate. The upper end of the telescopic connector is connected with the upper part of the lifting rod. The lower end of the telescopic connector is connected with the thermal insulation layer. The thermal insulation layer is composed of at least two alternately arranged layers of thermal barriers. The lifting rod moves up and down while rotating at the same time. According to the technical scheme of the invention, by means of the lifting rod and the telescopic connector, the occupied height space of the telescopic connector and the lifting rod in the heater is ensured to be minimum. Meanwhile, the equipment manufacture height is reduced and the cost is saved. The thermal insulation layer is composed of multiple layers of thermal barriers, so that the temperature filed of the thermal insulation layer is divided into a plurality of temperature gradient zones. Therefore, the range of a constant-temperature zone is enlarged, and the heat loss inside the temperature zone is reduced. The temperature field of the constant-temperature zone is more stable.

Description

technical field [0001] The invention relates to a temperature field device for HVPE growth, in particular to a temperature field device for vertical HVPE growth equipment. Background technique [0002] With the development of semiconductor industry technology, the products in the field of semiconductor industry material growth are constantly improving, and the requirements for temperature field control in the production process are getting higher and higher. In the field of semiconductor production, especially in the field of material growth in the HVPE field, heating is widely used. HVPE refers to hydride meteorological epitaxy. The key is to ensure the constant temperature field and high-precision control of the heating furnace. It is longer, resulting in a high equipment height and a large space occupation, and in the vertical HVPE (Hydride Vapor Epitaxy) growth equipment, the temperature field in the lowest temperature zone is prone to instability and fluctuations. Con...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/448H01L21/67
CPCC23C16/448H01L21/67011
Inventor 赵红军刘鹏李锐杨钧杰张国义
Owner SINO NITRIDE SEMICON