Shift register, drive circuit, and display panel

A shift register, polar electric technology, applied in static memory, digital memory information, instruments, etc., can solve problems such as negative threshold voltage, panel display effect, and negative transistor threshold voltage.

Active Publication Date: 2017-02-22
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the process problems of today's production lines, the threshold voltage of the transistor itself is negative due to fluctuations in process conditions during the production process of semiconductor oxide transistors.
In addition, the current backlight is illuminated by light, so that the semiconductor oxide transis

Method used

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  • Shift register, drive circuit, and display panel
  • Shift register, drive circuit, and display panel
  • Shift register, drive circuit, and display panel

Examples

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Embodiment Construction

[0038] The following is a more detailed description of a shift register and a driving circuit of the present invention in conjunction with the schematic diagram, which shows the preferred embodiment of the present invention. It should be understood that those skilled in the art can modify the present invention described here and still realize the present invention. The beneficial effects. Therefore, the following description should be understood to be widely known to those skilled in the art, and not as a limitation to the present invention.

[0039] figure 1 This is a schematic diagram of the module connection of a shift register provided by an embodiment of the present invention. A shift register of the present invention includes an initial control module 1, a first reverse module 2, a second reverse module 3, and a pull-up control module 4. First pull-up output module 5, second pull-up output module 6, first pull-down output module 7, second pull-down output module 8, first no...

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PUM

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Abstract

The invention provides a shift register, a drive circuit, and a display panel. The shift register comprises an initial control module, a first reversing module, a second reversing module, a pull-up control module, a first pull-up output module, a second pull-up output module, a first pull-down output module, a second pull-down output module, a first node, a second node, a third node and a fourth node, wherein the above modules respectively comprises at least one switch. The first pull-up output module and the first pull-down output module are used for controlling the signal output of a first signal output end, and the second pull-up output module and the second pull-down output module are used for controlling the signal output of a second signal output end. The first signal output end is electrically connected with the grid electrode of the display panel, and the second signal output end is electrically connected with the signal input end of a shift register at a next stage. Through two low-level signal input ends with different level signal values, a purpose that a semiconductor oxide transistor of the shift register cannot be conducted because of partially negative threshold is achieved.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to a shift register, a driving circuit and a display panel. Background technique [0002] At present, semiconductor oxide transistors can drive ultra-high-definition display panels due to their own semiconductor characteristics, and their high mobility and low power consumption make more and more display panels start to use semiconductor oxide transistors. [0003] At present, the gate drive circuits of small and medium-sized display panels mostly use 7T2C (7 thin film transistors and 2 capacitors). The use of semiconductor oxide transistors for 7 thin film transistors can effectively reduce power consumption and meet the needs of high pixels. However, due to the process problem of the current production line, the threshold voltage of the semiconductor oxide transistor is negative due to the fluctuation of the process conditions during the manufacturing process. In addition, the ...

Claims

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Application Information

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IPC IPC(8): G09G3/20G11C19/28
CPCG09G3/20G11C19/28G09G2310/0286
Inventor 符鞠建
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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