A maintenance method for prolonging the maintenance time interval of etching cavity opening

Abstract

The invention discloses a maintenance method for prolonging a time interval of opening maintenance of an etching cavity. The polymer accumulated in the cavity is removed under the closed state of the etching cavity. The method comprises the following steps: utilizing low-pressure high-flow high-power gas and high-pressure low-flow high-power isotropous plasma etching to respectively remove the polymers from the lower part and inner corner of the cavity, and then discharging the suspending grains generated by etching reaction from the cavity by pumping the high-flow gas and under the effect of the subsequent pumping. The plasma cleaning technology is periodically applied to the cavity; the lower level of the accumulation volume of the polymers in the etching cavity can be guaranteed; the generation of the grains can be effectively controlled; the product defects generated by the grain production can be reduced; the time interval of the opening maintenance can be obviously prolonged; the purposes of further increasing the production capacity and lowering the manufacturing cost are achieved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a maintenance method for prolonging the time interval for opening and maintenance of an etching cavity. Background technique [0002] Etching is an important process in the manufacture of integrated circuits, and the internal conditions of the etching chamber directly affect the etching quality. The etching chamber itself has high precision and complex structure. In addition to the diversity of etching gas and reactant materials, the polymer deposited inside the chamber during the etching process is also relatively complex. [0003] In the prior art, in order to reduce the polymer produced by the etching reaction in the chamber, when etching each silicon wafer, the silicon wafer itself will be cleaned in the chamber itself. Generally, the self-contained cleaning takes 1 to 2 minutes. Each piece. However, this method cannot clean the polymer, and the polymer will ...

AI Technical Summary

Problems solved by technology

During this period of time, the etching equipment was unable to produce normally

It can be seen that high-frequency cavity maintenance has a significant waste of production capacity and manufacturing costs

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