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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of shrinking, satisfactory performance, etc., and achieve the effect of improving performance

Active Publication Date: 2020-03-17
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, although the existing semiconductor process can meet the requirements of some applications, its performance is still not satisfactory in all aspects as the size of the components shrinks.

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0112] The following disclosure provides many different embodiments, or examples, for implementing the different features of the present disclosure. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the disclosure describes that a first feature is formed on or over a second feature, it means that it may include an embodiment in which the above-mentioned first feature is in direct contact with the above-mentioned second feature, and may also include additional features. Embodiments in which a feature is formed between the first feature and the second feature such that the first feature and the second feature may not be in direct contact. In addition, the same reference signs and / or symbols may be reused in different examples in the following publications. These repetitions are for simplicity and clarity and are not in...

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Abstract

The invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a fin structure formed on a substrate and a first gate structure formed across the fin structure. The semiconductor structure also includes a first source / drain structure formed in the fin structure adjacent to the first gate structure and a first contact formed on the first source / drain structure. Additionally, the first contact includes a first extension extending into the first source / drain structure. The present invention improves the performance of semiconductor structures.

Description

technical field [0001] The present invention relates to an integrated circuit device and its manufacture, and in particular to a semiconductor structure and its manufacturing method. Background technique [0002] Semiconductor devices are used in various electronic devices, such as personal computers, mobile phones, digital cameras and other electronic instruments. Formation of a semiconductor device generally includes sequentially depositing insulating or dielectric layers, conductive layers, and semiconductor layer materials on a semiconductor substrate, and patterning various material layers by photolithography to form circuit elements on the substrate. [0003] One approach to improving device performance is to increase the degree of circuit integration by shrinking the device size on a given chip. This is done by miniaturizing or reducing the size of the device on a given chip. Tolerance plays an important role in achieving chip size reduction. [0004] However, alth...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L21/336H01L21/8238
CPCH01L21/823821H01L29/66795H01L29/785H01L2029/7858H01L21/823871H01L29/7848H01L29/267H01L29/66545H01L29/165H01L27/0924H01L29/0847H01L29/41791H01L21/823814H01L29/665H01L21/76897H01L21/76831H01L21/76805H01L21/28518H01L29/41766H01L29/6653H01L29/45
Inventor 江国诚蔡庆威梁英强
Owner TAIWAN SEMICON MFG CO LTD