Super junction semiconductor device and manufacturing method thereof
A semiconductor and super-junction technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as field oxide damage and lower reliability of MOSFET devices
Active Publication Date: 2021-09-10
FAIRCHILD KOREA SEMICON
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- Application Information
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However, as the doping concentration of the P-type region and the N-type region in the alternating conductivity type drift layer decreases (or as the breakdown voltage increases), the field oxide will be caused by the high voltages in the termination region of the
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[0042] Certain exemplary embodiments of the present invention will now be described in more detail with reference to the accompanying drawings, in order to facilitate a comprehensive understanding of the composition and effects of the present invention. However, the present invention is not limited to the embodiments disclosed herein, but can be implemented in various configurations with various modifications. Therefore, it is apparent that the exemplary embodiments of the present invention are provided to complete the present invention and fully inform those skilled in the art of the scope of the present invention. For ease of explanation, in the drawings, some elements may be exaggerated from actual sizes, and corresponding elements may be shown on an enlarged or reduced scale.
[0043] When an element is referred to as being "on" or "in contact with" another element, it will be understood that the element may be in direct contact with or connected to the other element or vi...
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The invention provides a super junction semiconductor device and a manufacturing method thereof. The super junction semiconductor device includes: a first semiconductor layer doped with a first conductivity type; an active region formed on the first semiconductor layer, the active region including a drift layer; and arranged to surround A termination region of the active region, the termination region includes a lower edge region disposed on the side surface of the drift layer and an upper edge region disposed on the lower edge region, wherein the upper edge region includes a region disposed on the side surface of the drift layer a lower charge balance region on the lower edge region and an upper charge balance region disposed on the lower charge balance region, the lower charge balance region has a second conductivity type different from the first conductivity type, and the The upper charge balance region has the first conductivity type.
Description
technical field [0001] The present invention relates to a super junction semiconductor device and a manufacturing method thereof, and more particularly, to a super junction semiconductor device including alternating conductive type drift layers and a manufacturing method thereof. Background technique [0002] Power MOSFET devices or insulated gate bipolar transistor (IGBT) devices may be used as switching devices in electronic devices. Such switching devices require low on-resistance, high breakdown voltage, and high switching speed in the operating state. Since on-resistance and breakdown voltage generally have a trade-off relationship, it is difficult to obtain a switching device that satisfies both low on-resistance and high breakdown voltage. It has recently been reported that among power MOSFET devices, a MOSFET device with a superjunction structure including alternating conductivity type drift layers can simultaneously achieve lower on-resistance and higher breakdown ...
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IPC IPC(8): H01L29/78H01L29/06H01L29/08H01L21/336
CPCH01L29/0611H01L29/0688H01L29/0847H01L29/66666H01L29/78642H01L21/2253H01L29/0634H01L29/404H01L29/7811H01L29/66712H01L29/7395H01L29/66333H01L21/266H01L29/1095H01L29/36
Inventor 李光远姜惠民李在吉
Owner FAIRCHILD KOREA SEMICON