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Preparation method of high-purity cadmium telluride

A cadmium telluride, high-purity technology, applied in the directions of binary selenium/tellurium compounds, metal selenide/tellurium compounds, etc., can solve the problems of insufficient reaction, difficult to guarantee synthesis rate, insufficient uniform temperature, etc. Utilization of raw materials, overcoming the effect of being easily oxidized

Inactive Publication Date: 2017-03-15
乐山凯亚达光电科技有限公司
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Problems solved by technology

This method adopts the method of heating with a hot rod, the temperature is not uniform enough, and the reaction is not sufficient
The Chinese invention patent with the publication number CN1380246A discloses a preparation method of pounded cadmium powder. The method uses cadmium powder and tellurium powder to synthesize in a crucible under vacuum conditions. The synthesis temperature is to react at the melting point of cadmium. After grinding and annealing, the disadvantage is that the synthesis rate is difficult to guarantee

Method used

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Embodiment 1

[0017] A kind of preparation method of high-purity cadmium telluride is characterized in that comprising the following steps in sequence:

[0018] 1) First tellurium powder and cadmium powder are mixed according to the proportion of 1:1.5~1.56;

[0019] 2) Grind and stir the mixed raw materials to mix the tellurium powder and cadmium powder evenly;

[0020] 3) Put the uniformly mixed raw materials into the graphite boat, and then place the graphite boat in the synthesis furnace for synthesis; the synthesis is to first pass nitrogen gas to drive away the air in the synthesis furnace, and then slowly heat the synthesis furnace to 180~ 190°C, keep warm for 5-6 hours; quickly raise the temperature to 500-550°C, then stop feeding nitrogen, start feeding hydrogen; quickly raise the temperature to 1100-1200°C, keep warm for 2-3 hours; stop the flow after the temperature drops to 30°C Into the hydrogen, out of the furnace;

[0021] 4) Grind and mix the generated cadmium telluride ma...

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Abstract

The invention discloses a preparation method of high-purity cadmium telluride. The preparation method is characterized by sequentially including the steps of 1), firstly, mixing tellurium powder with cadmium powder according to proportion of 1:1.5-1.56; 2), grinding and stirring the mixed raw materials to have the tellurium powder and the cadmium powder mixed evenly; 3), feeding the evenly-mixed raw materials into a graphite boat and placing the graphite boat in a synthesis furnace for synthesizing; 4), grinding and mixing the generated cadmium telluride materials once more; 5), placing the ground cadmium telluride materials in a heating furnace for annealing treatment and controlling the temperature within 600-750DEG C and annealing time within 1-2 hours. With the method, purity of the qualified product is improved, and utilization of the raw materials is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing high-purity cadmium telluride. Background technique [0002] Cadmium telluride is a semiconductor compound synthesized by cadmium and tellurium. It is brown-black crystal powder, insoluble in water and acid, and can be decomposed by nitric acid. ideal photoelectric conversion material. [0003] At present, there are many ways to synthesize cadmium telluride. The earlier synthesis method of cadmium telluride is to insert a hot rod into the mixed powder of cadmium and cadmium, and heat it to 500°C to form it. This method adopts the mode of hot rod heating, and the temperature is not uniform enough, and the reaction is not sufficient enough. The Chinese invention patent with the publication number CN1380246A discloses a preparation method of pounded cadmium powder. The method uses cadmium powder and tellurium powder to synthesize in a crucibl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
CPCC01B19/007
Inventor 郭春雨陈俊陈云博于平于清炎干大强
Owner 乐山凯亚达光电科技有限公司
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