Semiconductor device and method of manufacturing fin field effect transistor device
A technology of field effect transistors and semiconductors, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., and can solve problems such as the limitation of contact area formation
Active Publication Date: 2019-11-15
TAIWAN SEMICON MFG CO LTD
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
With the ever-increasing device density of FinFET devices, the formation of contact regions in the source / drain regions is increasingly limited
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0058] The following disclosure provides many different implementations, or examples, for implementing different features of the presented subject matter. Specific embodiments of components and arrangements are described below to simplify the present disclosure. Such embodiments are of course only examples and are not intended to be limiting. For example, the following description of forming a first feature on or over a second feature may include embodiments in which such first and second features are formed in direct contact, as well as embodiments in which such first and second features may be formed in direct contact. Embodiments in which additional features are formed between and second features such that such first and second features may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various embodiments. This repetition is for brevity and clarity and does not in itself indicate a relationship between the var...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A method of a semiconductor device and a manufacturing fin field effect transistor device, which contains the first and second fin structure that forms from the isolation insulating layer;First and the second fin structure has the source / drain region with the first width of the grid structure and the first width;, Each repair source / drain area has a second width of less than the first width of the first width; the rectification material is formed above the versatile source / drain areaThe strain material in the fin structure is separated; the interclass layer is formed with the strain material above the grid structure and the source / drain area; and the contact layer is formed on the strain material to enable the contact layer to surround the strain material.The combination of the renovated source / leakage region and the strain material increases the contact area of the contact area to reduce the parasitic capacitor existing in the fins of the fins.
Description
technical field [0001] The present invention relates to a semiconductor integrated circuit. Background technique [0002] In the pursuit of higher component density, higher performance and lower cost, the semiconductor industry has developed to the nanotechnology process node, and the challenges brought about by manufacturing and design issues have led to the development of three-dimensional designs, such as fin field effect transistors ( fin field effect transistor; Fin FET). A FinFET device is a type of multi-gate structure that typically includes a semiconductor fin having a high aspect ratio in which the channel and source / drain regions of the semiconductor transistor device are formed. Forming the gate over the fin structure (e.g., encapsulation) and along the sides of the fin structure takes advantage of the increased surface area of the channel and source / drain regions to produce faster, more reliable and better controlled semiconductor transistors device. With t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66795H01L29/7848H01L29/785H01L21/26513H01L21/26586H01L29/41791H01L29/66803H01L2029/7858H01L23/535H01L29/0649H01L29/7849
Inventor 江宏礼彭成毅许志成杨育佳
Owner TAIWAN SEMICON MFG CO LTD