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Work function adjustment method for semiconductor element with metal gate structure

一种金属栅极、调整方法的技术，应用在半导体器件、半导体/固态器件制造、电气元件等方向，能够解决不易形成、不易管控制作工艺稳定度等问题，达到容易管控、容易制作工艺稳定度、降低制造成本的效果

Active Publication Date: 2017-03-22
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when the work function of the semiconductor element is adjusted by adjusting the thickness of the work function metal layer, when the thickness of the work function metal layer is thin, it is difficult to control the process stability and form a continuous film.

Method used

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  • Work function adjustment method for semiconductor element with metal gate structure
  • Work function adjustment method for semiconductor element with metal gate structure
  • Work function adjustment method for semiconductor element with metal gate structure

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Embodiment Construction

[0040] Embodiments of the invention are described more fully hereinafter with reference to the accompanying drawings. However, the present invention may be practiced in many different forms and is not limited to the embodiments set forth herein. The directional terms mentioned in the following embodiments, such as "upper", "lower", "front", "rear", "inner", "outer", etc., are only referring to the directions of the attached drawings, so the directions used The terms are used to describe rather than to limit the invention. In addition, the sizes and relative sizes of the various layers may be exaggerated for the sake of clarity in the drawings.

[0041] Figure 1A to Figure 1B It is a schematic cross-sectional view of a work function adjustment process of a semiconductor device with a metal gate structure according to an embodiment of the present invention. figure 2 It is a schematic cross-sectional view of a metal gate structure according to another embodiment of the presen...

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Abstract

The invention discloses a work function adjustment method for a semiconductor element with a metal gate structure, and the method comprises the following steps: providing a first stacked gate structure and a second stacked gate structure, which have the same structure, wherein the first and second stacked gate structure respectively comprises a first work function metal layer of a first type; forming a patterned hard mask layer; enabling the patterned hard mask layer to expose the first work function metal layer of the first stacked gate structure and a first work function metal layer of the second stacked gate structure; carrying out the first gas processing of the first work function metal layer, exposed by the patterned hard mask layer, of the first stacked gate structure, wherein the gas employed in the first gas processing comprises gas containing nitrogen or oxygen. The method can employ the simple technology for adjustment.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor element, and in particular to a method for adjusting the work function of a semiconductor element with a metal gate structure. Background technique [0002] As the size of semiconductor devices shrinks, the size of the gate structure and the thickness of the gate dielectric layer also shrink accordingly. However, when the thickness of the gate dielectric layer made of silicon oxide is reduced, there will be a phenomenon of leakage current (Leakage Current). In order to reduce the occurrence of leakage current, the current practice is to replace silicon oxide with a high dielectric constant (High Dielectric Constant; high-k) material as the gate dielectric layer. In the case of using a high dielectric constant material as the gate dielectric layer, the gate made of polysilicon will react with the high dielectric constant material to generate Fermi-level Pinning, thus causing a critical...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28
CPCH01L21/28158H01L21/285H01L21/823842
Inventor 张云慈周仕旻赖国智张净云颜湘婕陈彦臻吕泱儒何念葶许启茂
Owner UNITED MICROELECTRONICS CORP