Vertical nanowire transistor and forming method thereof

Abstract

The invention discloses a vertical nanowire transistor and a forming method thereof. The forming method comprises the following steps: providing a substrate, wherein a plurality of channel columns arearranged on the surface of the substrate, the plurality of channel columns are perpendicular to the surface of the substrate, the plurality of channel columns comprise a plurality of first channel columns and a plurality of second channel columns, the first channel columns and the second channel columns are used for forming transistors of a first conduction type, the first channel columns are internally provided with first channel regions, and the second channel columns are internally provided with second channel regions; forming a first gate dielectric layer on the surface of the side wall of the first channel region of the first channel column; forming a second gate dielectric layer on the surface of the side wall of the second channel region of the second channel column; forming a first work function structure on the surface of the first gate dielectric layer; and forming a second work function structure on the surface of the second gate dielectric layer, wherein the work functionof the second work function structure is different from the work function of the first work function structure. The formed vertical nanowire transistor has a multi-threshold voltage.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a vertical nanowire transistor and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, the prior art proposes a vertical nanowi...

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Problems solved by technology

[0004]However, for vertical nanowire transistors, the difficulty of forming multi-threshold voltage transistors increases

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