Fin field effect transistor and method of forming the same

Abstract

Disclosed are a fin field effect transistor and a forming method thereof. The forming method of the fin field effect transistor comprises: providing a semiconductor substrate, the semiconductor substrate being provided with a first area and a second area, the first area and the second area being provided with projection fin portions and grid structures disposed on the fin portions; forming first side walls at the two sides of the gate structures of the first area, a part of the fin portions covered by the first side walls constituting a first negative covering area; forming second side walls at the two sides of the grid structures of the second area, the width of the second side walls being smaller than the width of the first side walls, a part of the fin portions covered by the second side walls constituting a second negative covering area; and performing ion implantation on the fin portions at the two sides of the grid structures of the first area and the second area, and forming a source area and a drain area. According to the forming method of the fin field effect transistor, fin field effect transistors with different threshold voltages can be formed, and the process is simple.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the advancement of integrated circuit technology, the integration level of the chip is getting higher and higher, and the scale is getting larger and larger, but the power consumption of the chip is also increasing. A single chip usually includes a core logic transistor area and an input / output (I / O) transistor area. The threshold voltage of the core logic transistor is low to reduce system power consumption, and the threshold voltage of the input / output transistor is high to ensure high drive capability and breakdown voltage. Therefore, how to obtain transistors with different threshold voltages on a single chip has become the focus of research. [0003] Please refer to figure 1 , is a schematic structural diagram of a MOS transistor in the prior art, including: a semiconduct...

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Problems solved by technology

[0006] The problem solved by the present invention is that the process of forming multi-threshold voltage transistors in the prior art is complex and costly

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