Semiconductor element and manufacturing method thereof
A production method and semiconductor technology, applied in the manufacture of semiconductor devices, electrical components, final products, etc., can solve the problems of increased process complexity, decreased overall pass rate, increased cost, etc., to achieve improved production pass rate and good electrical connection quality effect
Inactive Publication Date: 2017-03-22
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However, in addition to increasing the complexity of the process, the additional seed layer will also reduce the overall yield and greatly increase the cost
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[0050] figure 1 is a schematic diagram of fabricating a semiconductor device according to the first embodiment of the present invention. Please refer to figure 1 In the first embodiment of the present invention, the manufacturing method of the semiconductor device 100 includes providing a semiconductor stack 110 and an electroplating electrode 200 in a solution 300 and applying a voltage difference V to the semiconductor stack 110 and the electroplating electrode 200 . The voltage difference V causes the electroplating electrode 200 to provide at least one metal ion 201 into the solution 300 and form a metal ion solution 400 . That is to say, the manufacturing method of the semiconductor device in this embodiment provides the voltage difference V to the electroplating electrode 200 and the semiconductor stacked layer 110 so that the electroplating electrode 200 dissociates the metal ions 201 into the solution 300, so that the solution 300 forms a mixture of metal ions 201 40...
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The invention provides a manufacturing method of a semiconductor element. The manufacturing method of the semiconductor element comprises the following steps: providing a semiconductor stacking layer and an electroplating electrode in a solution; applying a voltage difference for the opposite side of the semiconductor stacking layer and the electroplating electrode; and providing a light beam to the semiconductor stacking layer, so that a first electrode is formed on an incident surface of the semiconductor stacking layer, wherein the voltage difference enables the electroplating electrode to provide at least one metal ion into the solution and form a metal ion solution, the incident surface of the semiconductor stacking layer is opposite to the opposite side of the semiconductor stacking layer, and the semiconductor stacking layer is suitable for absorbing the light beam and generating an electron to the incident surface, so that the metal ion in the metal ion solution and the electron form the first electrode on the incident surface of the semiconductor stacking layer. Based on the manufacturing method, the semiconductor element is also provided.
Description
technical field [0001] The present invention relates to an electronic component and its fabrication method, and in particular to a semiconductor component and its fabrication method. Background technique [0002] In the existing solar cell technology, the heterojunction solar cell with the heterojunction (Heterojunction with Intrinsic Thin-Layer, HIT) formed by the heterojunction technology (Heterojunction Technology, HJT) mainly uses semiconductors with different energy bands. materials combined. Heterojunction solar cells not only have high photoelectric conversion efficiency and good temperature characteristics, but also can reduce the loss of free carriers in solar cells through the combination of different energy bands. Therefore, heterojunction solar cells have become one of the main development technologies in current solar cell technology. [0003] In existing heterojunction solar cells, N-type silicon heterojunction solar cells have a front emitter structure, that...
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IPC IPC(8): H01L31/0224H01L31/072H01L31/18
CPCH01L31/022425H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 刘书谦詹逸民吴建树
Owner ARCHERS