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Spin-transfer torque magnetic random access memory including annular magnetic tunnel junctions

A random access memory, magnetic tunnel junction technology, applied in static memory, digital memory information, information storage and other directions, can solve problems such as data read errors

Active Publication Date: 2017-04-05
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At this time, if the conventional reading circuit is still used, it will cause data reading errors

Method used

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  • Spin-transfer torque magnetic random access memory including annular magnetic tunnel junctions
  • Spin-transfer torque magnetic random access memory including annular magnetic tunnel junctions
  • Spin-transfer torque magnetic random access memory including annular magnetic tunnel junctions

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Embodiment Construction

[0028] Some exemplary embodiments of the present invention will be described below with reference to the accompanying drawings. For the sake of thoroughness and completeness of description, some specific details are provided below to illustrate these exemplary embodiments. It should be understood, however, that the invention should not be limited to the precise forms of these exemplary embodiments. Rather, embodiments of the invention may be practiced without these specific details.

[0029] image 3 A schematic circuit diagram of a magnetic random access memory 300 according to an embodiment of the present invention is shown. Such as image 3 As shown, the MRAM 300 includes a plurality of magnetic tunnel junctions C arranged in a matrix formed by rows and columns. In some embodiments, the magnetic tunnel junction C may be figure 1The annular magnetic tunnel junction shown includes a reference layer, a free layer and an insulating barrier layer between them.

[0030] One...

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Abstract

The invention relates to a spin-transfer torque magnetic random access memory including annular magnetic tunnel junctions. The magnetic random access memory can have a plurality of memory cells, which are arranged into an array of rows and columns, each memory cell includes: a first transistor and a second transistor, with the source electrodes of the two being in mutual connection; a third transistor and a fourth transistor, wherein the drain electrodes of the two are connected to the drain electrodes of the first transistor and the second transistor respectively, and the source electrodes of the two are connected to each other; and the magnetic tunnel junctions, which connect the drain electrodes of the first transistor and the third transistor and the drain electrodes of the second transistor and the fourth transistor.

Description

technical field [0001] The present invention relates generally to magnetic random access memory (MRAM), and more particularly, to a spin transfer torque type magnetic random access memory (STT-MRAM) having a memory cell including a ring-shaped magnetic tunnel junction and a A read circuit for reading individual memory cells, and also relates to a method of operating a magnetic random access memory. Background technique [0002] The concept of magnetic random access memory (magnetic random access memory, MRAM) was proposed as early as 1955, but it was not until the discovery of room temperature tunneling magnetoresistance (TMR) effect in 1995 that MRAM attracted widespread attention from the scientific and industrial circles. . MRAM has many advantages such as non-volatility, long life, low power consumption, and radiation resistance, and is regarded as one of the main candidates for next-generation storage technology, which can be used in industrial automation, embedded com...

Claims

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Application Information

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IPC IPC(8): G11C11/16
Inventor 韩秀峰秦健鹰刘厚方章尧君郭鹏陈怡然李海魏红祥丰家峰詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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