Method for forming semiconductor device structure
A device structure and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as component size reduction and difficult implementation of manufacturing processes
Active Publication Date: 2017-04-05
TAIWAN SEMICON MFG CO LTD
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- Description
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- Application Information
AI Technical Summary
Problems solved by technology
[0004] However, manufacturing processes continue to become difficult as component sizes continue to decrease
Therefore, it is a challenge to form reliable semiconductor devices at smaller and smaller sizes
Method used
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Embodiment Construction
[0014] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to limit the invention. For example, in the following description, the formation of the first component on or on the second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include that additional components may be formed on Between the first and second parts, such that the first part and the second part may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in each embodiment. This repetition is for brevity and clarity only and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.
[0015] Mo...
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A method for forming a semiconductor device structure is provided. The semiconductor device structure includes forming a film over a substrate. The semiconductor device structure includes forming a first mask layer over the film. The semiconductor device structure includes forming a second mask layer over the first mask layer. The second mask layer exposes a first portion of the first mask layer. The semiconductor device structure includes performing a plasma etching and deposition process to remove the first portion of the first mask layer and to form a protection layer over a first sidewall of the second mask layer. The first mask layer exposes a second portion of the film after the plasma etching and deposition process. The semiconductor device structure includes removing the second portion using the first mask layer and the second mask layer as an etching mask. The embodiments relate to a method for forming a semiconductor device structure.
Description
technical field [0001] Embodiments of the present invention relate to methods of forming semiconductor device structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs. Each generation of ICs has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and producing ICs. [0003] In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has generally increased while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) has decreased. Often this scaling down process benefits by increasing production efficiency and reducing associated costs. [0004] However, manufacturing processes continue to become difficult to implement as component sizes continue to dec...
Claims
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IPC IPC(8): H01L21/027H01L21/3065H01L21/205C23C16/44
CPCC23C16/44H01L21/027H01L21/3065H01L21/0276H01L21/0337H01L21/31138H01L21/31144H01L21/32139H01L29/66575H01L29/78H01L21/28123H01L21/3085H01L21/3081H01L21/31127H01L21/32137H01L21/28035H01L29/66568
Inventor 廖耕颍曾重宾陈柏仁陈益弘陈怡杰
Owner TAIWAN SEMICON MFG CO LTD