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Power module and vehicle having same

A technology for power modules and power chips, applied in the field of power modules and vehicles with them, can solve the problems of reducing the service life of power semiconductor modules, limited heat dissipation capacity of the bottom plate, different expansion coefficients, etc., and achieves simple structure, guaranteed electrical characteristics, production The effect of simple process

Active Publication Date: 2017-04-05
BYD SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of power semiconductor module is composed of multi-layer materials, the structure is relatively complex, and the expansion coefficients of each layer are different. The multi-layer structure hinders heat dissipation, and the heat dissipation capacity of the bottom plate is limited. The thermal resistance of the whole module is large, which seriously reduces the use of power semiconductor modules. life

Method used

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  • Power module and vehicle having same
  • Power module and vehicle having same
  • Power module and vehicle having same

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Embodiment Construction

[0020] Embodiments of the invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0021] The following first combines the attached Figure 1 to Figure 3 The power module 100 according to the embodiment of the first aspect of the present invention will be described in detail.

[0022] Such as figure 1 As shown, the power module 100 according to the embodiment of the present invention includes a casing 10 , a power chip 20 and two flat heat pipes 30 . Specifically, the casing 10 defines an accommodation cavity 11, and the accommodation cavity 11 is filled with an insulating material (not shown). Covering, wherein, the insulating material can be a silicone material, or a cooling liquid with insulating and heat-conducting properties, so that it...

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Abstract

The present invention discloses a power module and a vehicle having the same. The power module comprises: a housing, wherein a holding cavity is limited in the housing, and the holding cavity is internally provided with insulation materials; a power chip and two panel heat pipes which are all arranged in the holding cavity and wrapped by the insulation materials, each panel heat pipe has one condensation portion and an evaporation portion, the evaporation portions of the two panel heat pipes are respectively arranged at the upper and lower surfaces of the power chip, and electrodes are led out from the power chip and each panel heat pipe. According to the power module provided by the embodiment of the invention, the upper and lower surfaces of the power chip can realize heat dissipation at the same time to enhance the heat dissipation function of the power module and improve the reliability of the power module; and moreover, the power module omits the copper-clad ceramic substrate in the prior art to simplify the structure and the production process, the insulation materials are arranged in the housing to play an effect of electrical insulation so as to allow each device in the housing to ensure the independent electrical features.

Description

technical field [0001] The present invention relates to the field of electronic manufacturing, and more specifically, to a power module and a vehicle with the same. Background technique [0002] A power semiconductor module is a device in which multiple semiconductor chips are packaged together according to a certain circuit structure. In a power module, power chips and diode chips are integrated into a common mounting base, and the power devices of the power semiconductor module and the mounting base are insulated from each other. [0003] The specific packaging structure of the IGBT module in the related art is: the lower surface of the chip is directly connected to the DBC substrate, and the chip connected to the DBC substrate is then connected to the heat dissipation base plate. Specifically, the surface metallized chip uses thin aluminum bonding wires Electrical connections are made by keying. Furthermore, the large heat dissipation form of the IGBT module in the rela...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/427H01L23/367H01L23/31
CPCH01L23/3114H01L23/367H01L23/427H01L2224/33H01L2924/181H01L2924/00012
Inventor 李慧薛鹏辉曾秋莲廖雯祺杨钦耀
Owner BYD SEMICON CO LTD
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