Multimode radio frequency power amplifier

A power amplifier, multi-mode radio frequency technology, applied in power amplifiers, radio frequency amplifiers, high-frequency amplifiers and other directions, can solve the problem that the matching circuit is difficult to meet the bandwidth requirements, and achieve the effect of high integration, simple circuit structure and low cost

Active Publication Date: 2017-04-05
RDA MICROELECTRONICS SHANGHAICO LTD
View PDF12 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Band42 frequency band from the GSM high frequency band to the LTE-TDD mode has a rather large frequency span, and it is difficult for existing matching circuits to meet such a wide bandwidth requirement

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multimode radio frequency power amplifier
  • Multimode radio frequency power amplifier
  • Multimode radio frequency power amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] see figure 2 , this is the radio frequency power amplifier covering GSM, TD-SCDMA and LTE-TDD multi-mode of this application, only one chip: chip three is used to realize the radio frequency of each frequency band of GSM mode, TD-SCDMA mode and LTE-TDD mode Signal amplification. The multimode radio frequency power amplifier includes:

[0026]——Shared amplifier circuit, used to amplify the input radio frequency signals of GSM low frequency band, GSM high frequency band, TD-SCDMA frequency band and / or LTE-TDD frequency bands. The GSM low frequency band includes the GSM-850 frequency band and the E-GSM-900 frequency band. The GSM high frequency band includes the DCS-1800 frequency band and the PCS-1900 frequency band, and the EDGE technology is also realized by using the GSM high frequency band. The TD-SCDMA frequency band includes one or more of Band34 and Band39. Each frequency band of the LTE-TDD includes at least one or more of Band38, Band39, Band40, and Band41, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a multimode radio frequency power amplifier. The power amplifier comprises a common amplifier circuit for amplifying the power of an input radio frequency signal, a harmonic suppression circuit, a high-frequency-band common matching circuit, a high-frequency-band difference matching circuit and a low-frequency-band matching circuit, wherein the harmonic suppression circuit is connected with the input end of the high-frequency-band common matching circuit through a first switch and used for suppressing harmonic waves of signals at the GSM high frequency band or the TD-SCDMA frequency band; the high-frequency-band common matching circuit conducts impedance conversion matching on the received radio frequency signals at the GSM high frequency band, the TD-SCDMA frequency band or the LTE-TDD frequency band; the high-frequency-band difference matching circuit further conducts impedance conversion matching and / or harmonic suppression on the received radio frequency signals at the GSM high frequency band or the TD-SCDMA frequency band, and then sends the signals to a switch circuit; the low-frequency-band matching circuit conducts impedance conversion matching on the received radio frequency signals at the GSM low frequency band and sends the signals to the switch circuit. GSM, TD-SCDMA and LTE-TDD multimode radio frequency power is amplified with only one chip, circuit multiplexing and circuit sharing are used a lot, the integrity is high, the circuit structure is simple, and cost is low.

Description

technical field [0001] The present application relates to a multi-mode radio frequency power amplifier, which can be used to amplify radio frequency signals of various frequency bands in GSM mode, TD-SCDMA mode and / or LTE-TDD mode. The GSM mode includes EDGE (Enhanced Data rates for GSM Evolution, GSM enhanced data rates evolution). Background technique [0002] In mobile communication terminals represented by mobile phones, RF power amplifiers are essential. For example, the radio frequency power amplifier is located at the final stage of the transmitter, which is used to amplify the modulated radio frequency signal to the required power value and send it to the antenna for transmission. [0003] From 2G technology to 4G technology, many mobile communication terminals support multiple network modes. These network modes include, for example, GSM, cdmaOne (also abbreviated as CDMA), WCDMA, TD-SCDMA, CDMA2000, WiMAX, LTE-TDD (also called TDD LTE or TD LTE), LTE-FDD and the l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/48H03F1/56H03F3/19H03F3/21H03F3/24
CPCH03F1/48H03F1/565H03F3/19H03F3/21H03F3/24H03F2200/451
Inventor 陈文斌贾斌李啸麟曾真章乐
Owner RDA MICROELECTRONICS SHANGHAICO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap