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Semiconductor device, manufacturing method thereof and electronic device

A manufacturing method and semiconductor technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of changing the electrical conductivity of the first polysilicon layer 100, increasing process complexity and process cost, etc. The effect of reducing process costs and reducing process steps

Active Publication Date: 2017-04-19
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the PiP capacitor of this structure, since the first polysilicon layer 100 as the lower electrode plate is blocked by the second polysilicon layer 102, an ion implantation process needs to be added to change the first polysilicon layer 100. Conductive performance, while increasing ion implantation requires an increase in the corresponding mask (mask), which increases the complexity and cost of the process

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device

Examples

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Embodiment 1

[0042] Below, refer to Figure 3A to Figure 3H as well as Figure 4 A method for manufacturing a semiconductor device according to an embodiment of the present invention will be specifically described. in, Figure 3A to Figure 3H A cross-sectional view of a structure formed in the relevant steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention; Figure 4 It is a flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

[0043] The method for manufacturing a semiconductor device according to Embodiment 1 of the present invention includes the following steps:

[0044] Step S401: Provide a semiconductor substrate, the semiconductor substrate is formed with an isolation structure 301 and an active region separated by the isolation structure, and a first polysilicon layer 302 and a hard mask layer are formed on the semiconductor substrate 303, the formed structure ...

Embodiment 2

[0077] Another embodiment of the present invention provides a semiconductor device, which can be prepared by the above-mentioned method. Below, refer to Figure 5 and Figure 6 The specific structure of the semiconductor device according to the embodiment of the present invention will be introduced. in, Figure 5 shows a cross-sectional view of a semiconductor device with a PiP capacitor according to Embodiment 2 of the present invention; Figure 6 A layout of a semiconductor device with a PiP capacitor according to Embodiment 2 of the present invention is shown. Figure 6 can be regarded as Figure 5 A top view of the semiconductor device shown.

[0078] like Figure 5 and Figure 6 As shown, the semiconductor device 500 of the embodiment of the present invention includes a semiconductor substrate, an isolation structure 501 formed on the semiconductor substrate, and first polysilicon lines 502 and The second polysilicon line 505, and spacers 504 are formed on both si...

Embodiment 3

[0086] Still another embodiment of the present invention provides an electronic device, including a semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device is a semiconductor device manufactured according to the above-mentioned method for manufacturing a semiconductor device, or is a semiconductor device as described above.

[0087] Wherein, the electronic component may be any electronic component such as a discrete device or an integrated circuit.

[0088] Exemplarily, the semiconductor device includes a semiconductor substrate, an isolation structure formed on the semiconductor substrate, and a first polysilicon line and a second polysilicon line arranged at intervals on the isolation structure , and spacers are formed on both sides of the first polysilicon line, wherein the first polysilicon line, the second polysilicon line and the spacer form a PiP capacitor, and the first polysilicon line The crystal sili...

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Abstract

The present invention provides a semiconductor device, a manufacturing method thereof and an electronic device, and relates to the technical field of semiconductors. The method includes the steps of providing a semiconductor substrate, forming a first polysilicon layer on the semiconductor substrate, patterning the first polysilicon layer to form a first polysilicon line, forming sidewall spacers on the two sides of the first polysilicon line, forming a second polysilicon layer on the first polysilicon layer, patterning the second polysilicon layer to form a second polysilicon line spaced apart from the first polysilicon line, and performing the ion implantation to complete the doping process of the first polysilicon line and the second polysilicon line. The first polysilicon line serves as one electrode plate of a PIP capacitor. The second polysilicon line serves as the other electrode plate of the PIP capacitor. The sidewall spacers on the two sides of the first polysilicon line serve as the dielectric medium of the PIP capacitor. The electronic device includes the above-described semiconductor device, and has the same advantages with the semiconductor device.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of semiconductor technology, integrated circuits are gradually developing towards ultra-large-scale integrated circuits (ULSI). The feature size of devices is getting smaller and smaller, the density is getting higher and higher, and the number of components is increasing. In order to increase the device density, you can use a A thin polysilicon layer (the second polysilicon layer) is used for local interconnection (inter-connect) to surround the contact plug in the extension area, which can reduce the active area of ​​the device, thereby increasing the device density. [0003] Since this process has two polysilicon layers, PiP (polysilicon-insulator-polysilicon) capacitors can be made. Conventional PiP capacitors such as figure 1 As...

Claims

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Application Information

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IPC IPC(8): H01L27/06H01L21/82
Inventor 余达强
Owner SEMICON MFG INT (SHANGHAI) CORP