Epitaxial wafer of light-emitting diode and manufacturing method thereof
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A technology of light-emitting diodes and epitaxial wafers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the luminous brightness and service life of LEDs, and achieve the effect of improving luminous brightness and improving the efficiency of recombination.
Active Publication Date: 2017-04-19
HC SEMITEK ZHEJIANG CO LTD
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[0005] The mobility and mobility of electrons are greater than that of holes, and the number of electrons injected into the multi-quantum well layer is far more than t
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Embodiment 1
[0026] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 1 The light emitting diode epitaxial wafer includes a substrate 1, and a low-temperature buffer layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multi-quantum well layer 5, and a P-type electron blocking layer 6 stacked on the substrate 1 in sequence. , P-type GaN layer 7, multi-quantum well layer 5 includes several sublayers 50, sublayer 50 includes quantum well layer 51 and quantum barrier layer 52 stacked on quantum well layer 51, quantum well layer 51 is InGaN layer, quantum barrier Layer 52 is Al x In y GaN layer, 0b GaN, 0
[0027] In an implementation of this embodiment, the quantum barrier layer 52 can be a single layer of Al x In y GaN layer, all monolayer Al x In y The content of the Al component in the GaN layer can be reduced layer by layer along the stacking direction of the light emitting diode epitaxial wafer. For example, alon...
Embodiment 2
[0039] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, see figure 2 , the method flow includes:
[0040] Step 201: growing a low temperature buffer layer on the substrate.
[0041] Step 202: growing an undoped GaN layer on the low-temperature buffer layer.
[0042] Step 203: growing an N-type GaN layer on the undoped GaN layer.
[0043] Step 204: growing a multi-quantum well layer on the N-type GaN layer.
[0044] In this embodiment, the multi-quantum well layer includes several sublayers, the sublayers include a quantum well layer and a quantum barrier layer stacked on the quantum well layer, the quantum well layer is an InGaN layer, and the quantum barrier layer is an Al layer. x In y GaN layer, 0
[0045] It should be noted that after the growth of the quantum well layer is completed, the In source and the Al source will continue to be supplied to adjust the pressure, temperature, NH 3...
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Abstract
The invention, which belongs to the technical field of the semiconductor, discloses an epitaxial wafer of a light-emitting diode and a manufacturing method thereof. The epitaxial wafer comprises a substrate, a low-temperature buffer layer, an undoped GaN layer, an N-type GaN layer, a multi-quantum well layer, a P-type electron blocking layer, and a P-type GaN layer, wherein the low-temperature buffer layer, the undoped GaN layer, the N-type GaN layer, the multi-quantum well layer, the P-type electron blocking layer, and the P-type GaN layer are laminated on the substrate successively. The multi-quantum well layer consists of a plurality of sub layers; the sub layers include quantum well layers and quantum barrier layers laminated on the quantum well layers; the quantum well layers are InGaN layers and the quantum barrier layers are AlxInyGaN layers, wherein the x is larger than 0 and is smaller than 0.5 and the y is larger than 0 and is less than 0.5. The P-type electron blocking layer is an AlbGaN layer, wherein the b is larger than 0 and is less than 0.2 and the b is smaller than the x. According to the epitaxial wafer and the manufacturing method, the AlInGaN layers are used as the quantum barrier layers, the InGan in the quantum barrier layers can realize good lattice matching with the InGaN quantum well layers, and Al in the quantum barrier layers plays a role in continuously blocking and buffering electrons, so that overflowing of the electrons out of the quantum well layers can be reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light-emitting diode (English: Lighting Emitting Diode, referred to as LED) is called the fourth-generation light source, which has the characteristics of energy saving, environmental protection, safety, long life, high brightness, etc., and can be widely used in various display, backlight, lighting and other fields. It is considered to be one of the most likely options to replace incandescent and fluorescent lamps in the future. [0003] The core part of the LED is a wafer composed of a P-type semiconductor and an N-type semiconductor. There is a transition layer between the P-type semiconductor and the N-type semiconductor, which is called a PN junction. In the PN junction, the holes injected by the P-type semiconductor recombine with the electrons injected by the N-...
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