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A method of preparing diamond/copper composite parts with high volume fraction

A high volume fraction, composite material technology is applied in the field of preparing copper-based composite material parts with high volume fraction diamond particles, which can solve the problem of uneven mixing of copper powder and diamond powder, and achieves overcoming machining difficulties, uniform distribution, Flexible Adjustable Effects

Active Publication Date: 2018-11-27
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The process of the invention is simple, because the double-coated diamond powder with different copper content is prepared, the diamond-copper composite material can be directly prepared without adding copper powder, so it not only solves the problem of copper powder in the process of preparing diamond-copper composite material by the traditional method The problem of uneven mixing with diamond powder, while improving the bonding strength between the diamond surface and the copper matrix, the prepared diamond-copper composite material has excellent performance

Method used

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  • A method of preparing diamond/copper composite parts with high volume fraction

Examples

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Effect test

Embodiment 1

[0013] Example 1: Preparation of Diamond / Cu composite parts with a diamond volume fraction of 70%

[0014] Step 1: Weigh 10g of diamond powder, MoO 3 Powder 12g, mixed salt NaCl-KCl (molar ratio NaCl:KCl=1:1) 30g, mixed evenly with a powder mixer. The mixed powder is heated to 1000°C for 3 hours in a rapid heating tubular electric furnace, during which it is protected by Ar atmosphere. The reaction product is washed, dried, and sieved to obtain the surface coating Mo 2 C layer of diamond powder.

[0015] Step 2: Weigh the plating Mo 2 8g of diamond powder in layer C is placed in 0.4L of SnCl 2 (30g / L) Surface sensitization in deionized water solution, and then placed in 0.4L PdCl 2 (0.25g / L) Surface activation in deionized water solution. Finally, the treated diamond powder is electrolessly copper-plated, and 2.288L of copper sulfate plating solution is prepared. The formula of the copper sulfate plating solution is CuSO 4 ·5H 2 O (15g / L), HCHO (37% aqueous solution, 14ml / L), EDTA...

Embodiment 2

[0018] Example 2: Preparation of Diamond / Cu composite parts with a diamond volume fraction of 60%

[0019] Step 1: Weigh 10g of diamond powder, MoO 3 Powder 24g, mixed salt NaCl-KCl (molar ratio NaCl:KCl=1:1) 40g, mix evenly with a powder mixer. The mixed powder is heated to 1050°C for 2h in a rapid heating tubular electric furnace, during which it is protected by Ar atmosphere. The reaction product is washed, dried, and sieved to obtain the surface coating Mo 2 C layer of diamond powder.

[0020] Step 2: Weigh the plating Mo 2 8g of diamond powder in layer C is placed in 0.4L of SnCl 2 (30g / L) Surface sensitization in deionized water solution, and then placed in 0.4L PdCl 2 (0.25g / L) Surface activation in deionized water solution. Finally, the treated diamond powder was electrolessly copper-plated, and 3.560L copper sulfate plating solution was prepared. The formula of copper sulfate plating solution was CuSO 4 ·5H 2 O (15g / L), HCHO (37% aqueous solution, 14ml / L), EDTA (14.5g / L),...

Embodiment 3

[0023] Example 3: Preparation of Diamond / Cu composite material parts with 50% diamond volume fraction

[0024] Step 1: Weigh 10g of diamond powder, MoO 3 Powder 36g, mixed salt NaCl-KCl (molar ratio NaCl:KCl=1:1) 50g, mixed evenly with a powder mixer. The mixed powder is heated to 1100°C in a rapid heating tubular electric furnace for 1 hour, during which time it is protected by Ar atmosphere. The reaction product is washed, dried, and sieved to obtain the surface coating Mo 2 C layer of diamond powder.

[0025] Step 2: Weigh the plating Mo 2 8g of diamond powder in layer C is placed in 0.4L of SnCl 2 (30g / L) Surface sensitization in deionized water solution, and then placed in 0.4L PdCl 2 (0.25g / L) Surface activation in deionized water solution. Finally, the treated diamond powder was electrolessly plated with copper to prepare 5.344L of copper sulfate plating solution. The formula of copper sulfate plating solution is CuSO 4 ·5H 2 O (15g / L), HCHO (37% aqueous solution, 14ml / L), ...

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Abstract

The invention provides a method for preparing diamond / copper composite material parts with high volume fraction. The method comprises the following steps: plating the surface of diamond with a uniform Mo2C layer by using a salt-bath plating technology to improve wettability of the diamond and copper; and then continuing copperizing the surface of the Mo2C layer by using a chemical plating method, and controlling the thickness of a copperizing layer by controlling the content of Cu2+ in a plating solution so as to prepare copper-containing double-plating-layer Cu-Mo2C-Diamond powder with the volume fraction of 30-50 vol.%. The Cu-Mo2C-Diamond powder is formed by an ultra-high-pressure cold pressing method, and Diamond / Cu composite material parts are prepared by a vacuum pressureless sintering method. The method has the advantages that the Diamond / Cu composite material parts with complicated shapes and high volume fractions of (50-70 vol. %) can be directly prepared, meanwhile, composite materials are uniform in structure and high in compactness, the Diamond / Cu composite material parts can be produced in batches, and the production cost is low.

Description

Technical field [0001] The invention belongs to the forming technology of metal matrix composite material parts, and in particular provides a method for preparing diamond particle reinforced copper-based (Diamond / Cu) composite material parts with high volume fraction. The preparation of low-cost and high-performance metal matrix composite parts is realized. Background technique [0002] Particle-reinforced copper-based composite material is the most studied and widely used composite material in the field of composite materials. High volume fraction (> 50vol%) Diamond / Cu composite material has excellent physical and mechanical properties, excellent dimensional stability, low linear expansion coefficient that can match with Si, GaAs and other semiconductor substrates, and is much higher than most composite materials. Conductivity has become one of the most ideal electronic packaging materials. It has an attractive application background in aviation, aerospace, and national defe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F5/00B22F3/02B22F3/10C23C18/38
CPCB22F3/02B22F3/1007B22F5/00B22F2999/00C23C18/38B22F2201/20
Inventor 何新波潘彦鹏任淑彬吴茂郑伟曲选辉
Owner UNIV OF SCI & TECH BEIJING
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